18167087. SEMICONDCUTOR DEVICES AND METHODS OF FORMING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)

SEMICONDCUTOR DEVICES AND METHODS OF FORMING THE SAME

Organization Name

Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor(s)

Chia-Wei Su of Taoyuan City (TW)

Yung-Hsu Wu of Taipei City (TW)

Hsin-Ping Chen of Hsinchu County (TW)

Chih Wei Lu of Hsinchu County (TW)

Wei-Hao Liao of New Taipei City (TW)

Hsi-Wen Tien of Hsinchu County (TW)

Cherng-Shiaw Tsai of New Taipei City (TW)

SEMICONDCUTOR DEVICES AND METHODS OF FORMING THE SAME - A simplified explanation of the abstract

This abstract first appeared for US patent application 18167087 titled 'SEMICONDCUTOR DEVICES AND METHODS OF FORMING THE SAME

The abstract describes a method of forming a semiconductor device involving providing a substrate with an electric component, forming a composite dielectric layer on the substrate to cover the electric component, creating an opening through the composite dielectric layer, widening the upper portion of the opening through a directional etching process, and forming a metal feature in the opening.

• The method involves providing a substrate with an electric component.
• A composite dielectric layer is formed on the substrate to cover the electric component.
• An opening is created through the composite dielectric layer.
• A directional etching process is used to widen the upper portion of the opening.
• A metal feature is formed in the opening.

Potential Applications: - Semiconductor manufacturing - Electronics industry

Problems Solved: - Efficient formation of metal features in semiconductor devices - Enhanced device performance

Benefits: - Improved device reliability - Enhanced electrical properties

Commercial Applications: Title: Semiconductor Device Manufacturing Process This technology can be utilized in the production of various semiconductor devices, leading to improved performance and reliability. The market implications include advancements in electronics manufacturing and potential cost savings for manufacturers.

Prior Art: Readers can explore prior research in semiconductor device manufacturing processes, composite dielectric layers, and metal feature formation in semiconductor devices to gain a deeper understanding of the technology.

Frequently Updated Research: Stay informed about the latest developments in semiconductor manufacturing processes, materials science, and device integration techniques to enhance your knowledge of this technology.

Questions about Semiconductor Device Manufacturing: 1. How does the directional etching process contribute to widening the opening in the composite dielectric layer? 2. What are the key considerations when forming metal features in semiconductor devices?

Original Abstract Submitted

A method of forming a semiconductor device includes the following operations. A substrate is provided with an electric component. A composite dielectric layer is formed on the substrate and covers the electric component. An opening is formed through the composite dielectric layer. A directional etching process is performed to widen an upper portion of the opening. A metal feature is formed in the opening.