18167081. SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
Contents
- 1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Original Abstract Submitted
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
Organization Name
Taiwan Semiconductor Manufacturing Company, Ltd.
Inventor(s)
Wensen Hung of Hsinchu County (TW)
Tsung-Yu Chen of Hsinchu City (TW)
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - A simplified explanation of the abstract
This abstract first appeared for US patent application 18167081 titled 'SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
Simplified Explanation
The semiconductor device described in the patent application includes a substrate, two devices, a ring structure, a lid structure, and a first adhesive layer. The first device is on the substrate, the second device is adjacent to the first device on the substrate, the ring structure covers the substrate and the second device, and the lid structure covers the ring structure and the first device. The first adhesive layer is between the lid structure and the ring structure, containing phase change thermal interface material.
- Substrate, first device, second device, ring structure, lid structure, and first adhesive layer are key components of the semiconductor device.
- The ring structure includes a cover and a leg, while the lid structure includes a body and a protrusion that fits into the through opening of the cover.
- The first adhesive layer contains phase change thermal interface material, enhancing thermal conductivity between components.
Potential Applications
The technology described in the patent application could be applied in:
- Electronic devices
- Computer systems
- Automotive systems
Problems Solved
This technology helps in:
- Improving thermal management in semiconductor devices
- Enhancing heat dissipation efficiency
- Increasing overall performance and reliability of electronic systems
Benefits
The benefits of this technology include:
- Better thermal conductivity
- Enhanced heat dissipation
- Improved overall system performance
Potential Commercial Applications
The semiconductor device innovation could be utilized in:
- Consumer electronics
- Industrial machinery
- Telecommunications equipment
Possible Prior Art
There may be prior art related to:
- Semiconductor device packaging
- Thermal interface materials
Unanswered Questions
How does this technology compare to existing thermal management solutions in terms of efficiency and cost-effectiveness?
This article does not provide a direct comparison with existing thermal management solutions in terms of efficiency and cost-effectiveness. Further research or testing may be needed to evaluate these aspects.
What are the environmental implications of using phase change thermal interface material in semiconductor devices?
The article does not address the environmental implications of using phase change thermal interface material in semiconductor devices. Additional studies or assessments may be required to understand the environmental impact of this technology.
Original Abstract Submitted
A semiconductor device includes a substrate, a first device, a second device, a ring structure, a lid structure, and a first adhesive layer. The first device is disposed on the substrate. The second device is adjacent to the first device and is disposed on the substrate. The ring structure is disposed over the substrate and the second device. The ring structure includes a cover and a leg extending out from the cover. The cover has a through opening. The lid structure is disposed over the ring structure and the first device. The lid structure includes a body and a protrusion protruding from the body. The protrusion of the lid structure is inserted into the through opening of the cover of the ring structure. The first adhesive layer is disposed between the body of the lid structure and the cover of the ring structure and includes phase change thermal interface material.
