18166479. SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
Contents
- 1 SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SAME
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SAME - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Original Abstract Submitted
SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SAME
Organization Name
Taiwan Semiconductor Manufacturing Company, Ltd.
Inventor(s)
Hengyuan Lee of Hsinchu County (TW)
SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 18166479 titled 'SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SAME
Simplified Explanation
The semiconductor device described in the abstract consists of multiple layers including a first conductive layer, a memory layer, a second conductive layer, and a selector layer. The memory layer surrounds the first conductive layer, while the second conductive layer is positioned next to the memory layer. The selector layer is placed on top of the second conductive layer. The second conductive layer is covered by the memory layer on one side, by the selector layer on another side, and is exposed on a third side.
- The semiconductor device includes a first conductive layer.
- The memory layer surrounds the first conductive layer.
- A second conductive layer is positioned next to the memory layer.
- A selector layer is placed on top of the second conductive layer.
- The second conductive layer is covered by the memory layer on one side, by the selector layer on another side, and is exposed on a third side.
Potential Applications
The technology described in this patent application could be applied in:
- Memory storage devices
- Integrated circuits
- Semiconductor manufacturing
Problems Solved
This technology helps in:
- Improving memory storage efficiency
- Enhancing semiconductor device performance
- Enabling faster data processing
Benefits
The benefits of this technology include:
- Increased data storage capacity
- Enhanced device reliability
- Improved overall performance
Potential Commercial Applications
The potential commercial applications of this technology could be in:
- Consumer electronics
- Data centers
- Telecommunications industry
Possible Prior Art
One possible prior art for this technology could be:
- Similar semiconductor devices with multiple layers and memory storage configurations.
Unanswered Questions
How does this technology compare to existing memory storage solutions in terms of performance and efficiency?
This article does not provide a direct comparison with existing memory storage solutions.
What are the potential challenges in implementing this technology on a large scale for commercial production?
This article does not address the potential challenges in large-scale implementation for commercial production.
Original Abstract Submitted
A semiconductor device includes a first conductive layer, a memory layer, a second conductive layer and a selector layer. The memory layer surrounds the first conductive layer. The second conductive layer is disposed aside the memory layer. The selector layer is disposed on the second conductive layer. A first side of the second conductive layer is covered by the memory layer, a second side of the second conductive layer is covered by the selector layer, and a third side of the second conductive layer is exposed by the selector layer.
