18166403. SELF-ALIGNED SMALL CONTACT STRUCTURE simplified abstract (QUALCOMM Incorporated)
Contents
SELF-ALIGNED SMALL CONTACT STRUCTURE
Organization Name
Inventor(s)
Junjing Bao of San Diego CA (US)
Haining Yang of San Diego CA (US)
Hyunwoo Park of San Diego CA (US)
Kwanyong Lim of San Diego CA (US)
Ming-Huei Lin of New Taipei City (TW)
SELF-ALIGNED SMALL CONTACT STRUCTURE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18166403 titled 'SELF-ALIGNED SMALL CONTACT STRUCTURE
The semiconductor structure described in the patent application includes various components such as a gate structure, gate spacer, source/drain structure, dielectric layers, etch stop spacer, etch stop layer, and source/drain contact.
- The semiconductor structure features a gate structure on a substrate, with a gate spacer and source/drain structure nearby.
- It also includes a first dielectric layer, an etch stop spacer, and an etch stop layer for added functionality.
- The structure further comprises a source/drain contact that extends through the etch stop layer and the first dielectric layer.
- The sidewall of the source/drain contact adjoins the sidewalls of the etch stop layer and etch stop spacer.
Potential Applications: - This semiconductor structure could be used in the manufacturing of advanced electronic devices such as integrated circuits and microprocessors.
Problems Solved: - The structure addresses the need for improved performance and reliability in semiconductor devices by optimizing the layout and materials used.
Benefits: - Enhanced functionality and efficiency in electronic devices. - Improved performance and reliability of semiconductor components.
Commercial Applications: - The technology could be applied in the production of high-performance electronic devices for various industries such as telecommunications, computing, and automotive.
Questions about the Semiconductor Structure: 1. How does the etch stop layer contribute to the overall functionality of the semiconductor structure? 2. What are the advantages of having a source/drain contact that extends through multiple layers in the structure?
Original Abstract Submitted
Disclosed are techniques for a semiconductor structure. In an aspect, a semiconductor structure includes a gate structure disposed on a substrate, a gate spacer adjacent to the gate structure, a source/drain structure adjacent to the gate spacer, a first dielectric layer disposed on the substrate and the source/drain structure, an etch stop spacer over the first dielectric layer and adjacent to the gate spacer, and an etch stop layer over the gate structure, the gate spacer, and the etch stop spacer. The semiconductor structure further includes a source/drain contact extending through the etch stop layer and the first dielectric layer and in contact with the source/drain structure, a sidewall of the source/drain contact adjoining a sidewall of the etch stop layer and a sidewall of the etch stop spacer.
