18164426. SEMICONDUCTOR DEVICE simplified abstract (KABUSHIKI KAISHA TOSHIBA)
Contents
- 1 SEMICONDUCTOR DEVICE
SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
Ryohei Gejo of Kawasaki Kanagawa (JP)
SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18164426 titled 'SEMICONDUCTOR DEVICE
Simplified Explanation
The semiconductor device described in the abstract includes a semiconductor layer with various semiconductor regions of different conductive types, as well as a gate electrode facing one of the semiconductor regions.
- Semiconductor layer with first and second faces
- First semiconductor region of first conductive type with varying widths
- Plurality of second semiconductor regions of second conductive type
- Third semiconductor region of second conductive type between first semiconductor region and first face
- Fourth semiconductor region of first conductive type
- Fifth semiconductor region of second conductive type
- Gate electrode facing fourth semiconductor region
Potential Applications
This semiconductor device could be used in various electronic applications such as:
- Power electronics
- Integrated circuits
- Sensors
Problems Solved
This technology helps in:
- Improving semiconductor device performance
- Enhancing device efficiency
- Reducing power consumption
Benefits
The benefits of this technology include:
- Higher speed and performance
- Lower power consumption
- Increased reliability
Potential Commercial Applications
This technology could be applied in various industries such as:
- Electronics manufacturing
- Semiconductor fabrication
- Consumer electronics
Possible Prior Art
One possible prior art for this technology could be:
- Previous semiconductor devices with similar structures and configurations
Unanswered Questions
How does this technology compare to existing semiconductor devices in terms of performance and efficiency?
This article does not provide a direct comparison with existing semiconductor devices in terms of performance and efficiency. Further research or testing may be needed to determine the specific advantages of this technology over existing ones.
What are the specific manufacturing processes involved in creating this semiconductor device?
The article does not detail the specific manufacturing processes involved in creating this semiconductor device. Understanding the manufacturing processes could provide insights into the scalability and cost-effectiveness of implementing this technology.
Original Abstract Submitted
A semiconductor device of embodiments includes: a semiconductor layer having a first face and a second face; a first semiconductor region of a first conductive type in the semiconductor layer, in contact with the second face, and including a first portion having a first minimum width, a second portion having a second minimum width smaller than the first minimum width, and a third portion connecting the first portion and the second portion and having a third minimum width smaller than the second minimum width; a plurality of second semiconductor regions of a second conductive type in contact with the second face; a third semiconductor region of the second conductive type between the first semiconductor region and the first face; a fourth semiconductor region of the first conductive type; a fifth semiconductor region of the second conductive type; a gate electrode facing the fourth semiconductor region.
