18164349. SEMICONDUCTOR MEMORY DEVICES, MEMORY SYSTEMS INCLUDING THE SAME AND METHODS OF OPERATING MEMORY SYSTEMS simplified abstract (Samsung Electronics Co., Ltd.)
Contents
- 1 SEMICONDUCTOR MEMORY DEVICES, MEMORY SYSTEMS INCLUDING THE SAME AND METHODS OF OPERATING MEMORY SYSTEMS
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 SEMICONDUCTOR MEMORY DEVICES, MEMORY SYSTEMS INCLUDING THE SAME AND METHODS OF OPERATING MEMORY SYSTEMS - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Original Abstract Submitted
SEMICONDUCTOR MEMORY DEVICES, MEMORY SYSTEMS INCLUDING THE SAME AND METHODS OF OPERATING MEMORY SYSTEMS
Organization Name
Inventor(s)
Hoi-Ju Chung of YONGIN-SI (KR)
SANG-UHN Cha of YONGIN-SI (KR)
HO-YOUNG Song of HWASEONG-SI (KR)
HYUN-JOONG Kim of HWASEONG-SI (KR)
SEMICONDUCTOR MEMORY DEVICES, MEMORY SYSTEMS INCLUDING THE SAME AND METHODS OF OPERATING MEMORY SYSTEMS - A simplified explanation of the abstract
This abstract first appeared for US patent application 18164349 titled 'SEMICONDUCTOR MEMORY DEVICES, MEMORY SYSTEMS INCLUDING THE SAME AND METHODS OF OPERATING MEMORY SYSTEMS
Simplified Explanation
The patent application describes a semiconductor memory device that includes a memory cell array, an error correction circuit, an error log register, and a control logic circuit. The memory cell array consists of multiple memory bank arrays, each containing multiple pages.
- The control logic circuit controls the error correction circuit to perform error correction sequentially on specific pages designated by an access address.
- This error correction process is triggered by a command received from a memory controller.
- The control logic circuit also performs an error logging operation, writing page error information into the error log register.
- The page error information includes the number of error occurrences on each of the designated pages, determined during the error correction process.
Potential Applications
- This technology can be applied in various semiconductor memory devices, such as solid-state drives (SSDs), random-access memory (RAM), and flash memory.
- It can enhance the reliability and error correction capabilities of these memory devices, ensuring data integrity and preventing data loss.
Problems Solved
- The technology addresses the issue of bit errors in semiconductor memory devices.
- By performing error correction on designated pages and logging the error information, it helps identify and track errors in the memory cells.
- This allows for timely error detection and correction, improving the overall reliability and performance of the memory device.
Benefits
- The error correction circuit and error log register provide an efficient and effective way to handle bit errors in the memory cell array.
- Sequential error correction and error logging help streamline the error detection and correction process.
- The technology improves the overall reliability and data integrity of the semiconductor memory device, ensuring accurate and error-free data storage.
Original Abstract Submitted
A semiconductor memory device includes a memory cell array, an error correction circuit, an error log register and a control logic circuit. The memory cell array includes a plurality of memory bank arrays and each of the memory bank arrays includes a plurality of pages. The control logic circuit is configured to control the error correction circuit to perform an ECC decoding sequentially on some of the pages designated at least one access address for detecting at least one bit error, in response to a first command received from a memory controller. The control logic circuit performs an error logging operation to write page error information into the error log register and the page error information includes a number of error occurrence on each of the some pages determined from the detecting.
