18163995. PROFILE CONTROL FOR STRESS RELAXATION simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
Contents
PROFILE CONTROL FOR STRESS RELAXATION
Organization Name
Taiwan Semiconductor Manufacturing Company, Ltd.
Inventor(s)
Jiann-Horng Lin of Hsinchu (TW)
PROFILE CONTROL FOR STRESS RELAXATION - A simplified explanation of the abstract
This abstract first appeared for US patent application 18163995 titled 'PROFILE CONTROL FOR STRESS RELAXATION
The method described in the abstract involves providing a passivation layer with an embedded MIM capacitor, forming a redistribution layer (RDL) above the passivation layer, and creating an opening in the RDL above the MIM capacitor to separate it into two structures.
- The passivation layer includes an embedded MIM capacitor for improved performance.
- A redistribution layer (RDL) is formed above the passivation layer to facilitate electrical connections.
- An opening is created in the RDL above the MIM capacitor to separate it into distinct structures.
- The sidewalls of the RDL structures have a convex-shaped profile to resist stress migration and prevent cracks in the MIM capacitor.
- The process of forming the opening involves etching the RDL to different depths to achieve the desired structure.
Potential Applications: - Semiconductor manufacturing - Integrated circuit design - Electronics industry
Problems Solved: - Preventing stress migration in MIM capacitors - Enhancing reliability of integrated circuits - Improving performance of semiconductor devices
Benefits: - Increased durability of MIM capacitors - Enhanced electrical connectivity - Higher quality and reliability of electronic components
Commercial Applications: Title: Advanced Semiconductor Manufacturing Technique for Enhanced Reliability This technology can be utilized in the production of high-performance electronic devices, such as smartphones, computers, and automotive electronics. It can also benefit companies involved in semiconductor manufacturing and integrated circuit design by improving the reliability and longevity of their products.
Questions about the technology: 1. How does the convex-shaped profile on the sidewalls of the RDL structures help prevent stress migration? 2. What are the specific advantages of using an embedded MIM capacitor in the passivation layer of semiconductor devices?
Original Abstract Submitted
A method includes: providing a passivation layer with an embedded MIM capacitor; forming a redistribution layer (RDL) above the passivation layer; and forming an opening in the RDL above the MIM capacitor, wherein the opening separates the RDL into first and second RDL structures, wherein each of the first and second RDL structures has a convex-shaped profile on a sidewall that defines the opening that separates the first RDL structure from the second RDL structure, and wherein the convex-shaped profile on the sidewalls resists stress migration from the RDL to the MIM capacitor to resist stress migration induced cracks forming in the MIM capacitor. The forming an opening includes: removing a portion of the RDL to a first depth using first etching operations; and removing a portion of the RDL to a second depth by laterally etching sidewalls of the first and second RDL structures.
