18163293. SEMICONDUCTOR DEVICE simplified abstract (UNITED MICROELECTRONICS CORP.)
Contents
SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
Yu-Yuan Huang of Hsinchu City (TW)
Kai-Kuang Ho of Hsinchu City (TW)
Yi-Feng Hsu of Hsinchu City (TW)
SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18163293 titled 'SEMICONDUCTOR DEVICE
The semiconductor device described in the abstract consists of a substrate, a semiconductor layer, a source electrode, a first metal layer, a backside via hole, and a backside metal layer.
- The substrate has a frontside and a backside, with the semiconductor layer placed on the frontside.
- The source electrode is located on the semiconductor layer, followed by the first metal layer.
- A backside via hole extends from the backside of the substrate to the bottom surface of the first metal layer.
- The backside via hole is laterally separated from the source electrode by a non-zero distance.
- A backside metal layer covers the backside of the substrate and extends to cover the surface of the backside via hole.
Potential Applications: - This technology could be used in the development of advanced semiconductor devices for various electronic applications. - It may find applications in the manufacturing of high-performance integrated circuits and sensors.
Problems Solved: - Provides a more efficient and reliable way to connect the source electrode to the backside metal layer. - Enhances the overall performance and functionality of semiconductor devices.
Benefits: - Improved electrical connectivity and signal transmission within the semiconductor device. - Enhanced durability and stability of the device due to the secure connection between the source electrode and the backside metal layer.
Commercial Applications: Title: Advanced Semiconductor Device Technology for Enhanced Connectivity This technology has the potential to revolutionize the semiconductor industry by improving the efficiency and reliability of electronic devices. It can be utilized in various commercial applications such as consumer electronics, telecommunications, and automotive electronics.
Questions about the technology: 1. How does the lateral separation between the source electrode and the backside via hole impact the performance of the semiconductor device? 2. What are the specific advantages of using a backside metal layer in semiconductor devices?
Original Abstract Submitted
Provided is a semiconductor device including a substrate, a semiconductor layer, a source electrode, a first metal layer, a backside via hole, and a backside metal layer. The substrate has a frontside and a backside opposite to each other. The semiconductor layer is disposed on the frontside of the substrate. The source electrode is disposed on the semiconductor layer. The first metal layer is disposed on the source electrode. The backside via hole extends from the backside of the substrate to a bottom surface of the first metal layer. The backside via hole is laterally separated from the source electrode by a non-zero distance. The backside metal layer is disposed on the backside of the substrate and extending to cover a surface of the backside via hole.
