18160002. SEMICONDUCTOR DEVICE simplified abstract (KABUSHIKI KAISHA TOSHIBA)
Contents
- 1 SEMICONDUCTOR DEVICE
SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
Katsuhisa Tanaka of Himeji Hyogo (JP)
Hiroshi Kono of Himeji Hyogo (JP)
SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18160002 titled 'SEMICONDUCTOR DEVICE
Simplified Explanation
The semiconductor device described in the patent application consists of multiple layers and electrodes, with varying carrier concentrations and conductivity types. Here is a simplified explanation of the abstract:
- The device includes a first electrode, a second electrode, and a third electrode positioned between them.
- There are semiconductor layers connected to each electrode, with different conductivity types and carrier concentrations.
- The third electrode has two portions, and the first semiconductor layer faces one portion through an insulating layer.
- The first and second semiconductor layers are of a first conductivity type and contain silicon and carbon.
- The carrier concentration of the fourth semiconductor layer is higher than that of the third semiconductor layer.
Potential Applications
This technology could be applied in the development of advanced semiconductor devices for various electronic applications, such as sensors, transistors, and integrated circuits.
Problems Solved
This innovation addresses the need for semiconductor devices with optimized carrier concentrations and conductivity types to improve performance and efficiency in electronic devices.
Benefits
The benefits of this technology include enhanced device performance, increased efficiency, and potentially lower power consumption in electronic applications.
Potential Commercial Applications
The potential commercial applications of this technology could include the production of high-performance electronic devices for industries such as telecommunications, computing, and automotive.
Possible Prior Art
One possible prior art in this field could be the development of semiconductor devices with similar layer structures and electrode configurations, but with different materials or carrier concentrations.
Unanswered Questions
How does this technology compare to existing semiconductor devices in terms of performance and efficiency?
This article does not provide a direct comparison between this technology and existing semiconductor devices in terms of performance and efficiency. Further research or testing may be needed to determine the specific advantages of this innovation.
What are the potential challenges or limitations of implementing this technology in practical electronic devices?
The article does not address the potential challenges or limitations of implementing this technology in practical electronic devices. Factors such as manufacturing costs, scalability, and compatibility with existing technologies could be important considerations that are not covered in this article.
Original Abstract Submitted
A semiconductor device includes a first electrode, a second electrode, a third electrode located between the first electrode and the second electrode, a first semiconductor layer connected to the first electrode, a second semiconductor layer connected to the second electrode, a third semiconductor layer of a second conductivity type, and a fourth semiconductor layer of the second conductivity type. The third electrode includes first and second portions. The first semiconductor layer faces the first portion via an insulating layer. The first and second semiconductor layers are of a first conductivity type and include silicon and carbon. A carrier concentration of the fourth semiconductor layer is greater than a carrier concentration of the third semiconductor layer.
