18158263. SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THEREOF simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)

SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THEREOF

Organization Name

TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

Inventor(s)

Shih-Yao Lin of New Taipei City (TW)

Hsiao Wen Lee of Hsinchu City (TW)

Yu-Shan Cheng of Hsinchu City (TW)

Chao-Cheng Chen of Hsinchu City (TW)

SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THEREOF - A simplified explanation of the abstract

This abstract first appeared for US patent application 18158263 titled 'SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THEREOF

Simplified Explanation

The abstract describes a semiconductor device that includes a gate structure, a source/drain structure, and an air gap between them. Here is a simplified explanation of the abstract:

• A semiconductor device has a gate structure that extends in one direction.
• On one side of the gate structure, there is a source/drain structure that extends in a perpendicular direction.
• Between the gate structure and the source/drain structure, there is an air gap.
• The air gap is positioned over the source/drain structure.

Potential applications of this technology:

• This semiconductor device can be used in various electronic devices, such as smartphones, computers, and other integrated circuits.
• It can be used in the manufacturing of advanced transistors and microprocessors.

Problems solved by this technology:

• The air gap helps in reducing the capacitance between the gate and the source/drain structures, improving the performance and efficiency of the semiconductor device.
• It also helps in reducing the leakage current, which can enhance the overall power efficiency of the device.

Benefits of this technology:

• The air gap between the gate and the source/drain structures helps in improving the speed and performance of the semiconductor device.
• It also helps in reducing power consumption and improving energy efficiency.
• The use of air gap technology can enable the development of smaller and more compact electronic devices.

Original Abstract Submitted

A semiconductor device includes a gate structure extending along a first lateral direction. The semiconductor device includes a source/drain structure disposed on one side of the gate structure along a second lateral direction, the second lateral direction perpendicular to the first lateral direction. The semiconductor device includes an air gap disposed between the gate structure and the source/drain structure along the second lateral direction, wherein the air gap is disposed over the source/drain structure.