18157448. STRUCTURE AND METHOD FOR MULTI-GATE SEMICONDUCTOR DEVICES simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
Contents
STRUCTURE AND METHOD FOR MULTI-GATE SEMICONDUCTOR DEVICES
Organization Name
Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor(s)
Ko-Cheng Liu of Hsinchu City (TW)
Chang-Miao Liu of Hsinchu City (TW)
STRUCTURE AND METHOD FOR MULTI-GATE SEMICONDUCTOR DEVICES - A simplified explanation of the abstract
This abstract first appeared for US patent application 18157448 titled 'STRUCTURE AND METHOD FOR MULTI-GATE SEMICONDUCTOR DEVICES
Simplified Explanation
The present disclosure describes a method for forming a semiconductor device with a unique structure involving different semiconductor layers and a metal gate. Here are the key points of the innovation:
- Forming a stack of semiconductor layers with different material compositions over a substrate
- Creating a dummy gate structure around the stack
- Forming a gate spacer on the dummy gate structure
- Embedding a dielectric layer with the dummy gate
- Removing the dummy gate to create a gate trench
- Removing the second semiconductor layers to form semiconductor sheets
- Forming a metal gate around the semiconductor sheets
- Creating a source/drain feature adjacent to the metal gate
---
- Potential Applications
This technology could be applied in the manufacturing of advanced semiconductor devices for various electronic applications such as mobile devices, computers, and sensors.
- Problems Solved
This innovation solves the problem of improving the performance and efficiency of semiconductor devices by optimizing the gate structure and semiconductor layers.
- Benefits
The benefits of this technology include enhanced device performance, increased efficiency, and potentially reduced power consumption in electronic devices.
- Potential Commercial Applications
The potential commercial applications of this technology include the semiconductor industry, electronics manufacturing companies, and research institutions working on semiconductor device development.
---
- Possible Prior Art
One possible prior art for this technology could be the use of metal gates in semiconductor devices to improve conductivity and performance. Additionally, the concept of forming semiconductor layers with different compositions has been explored in previous semiconductor research.
---
- Unanswered Questions
- How does this method compare to existing techniques for forming semiconductor devices?
This article does not provide a direct comparison to existing techniques, leaving the reader to wonder about the specific advantages of this method over traditional approaches.
- What are the specific performance improvements achieved by this unique structure?
While the benefits of the technology are mentioned, the article does not delve into specific performance metrics or comparisons with standard semiconductor devices.
Original Abstract Submitted
The present disclosure provides a method that includes forming a stack including first and second semiconductor layers over a semiconductor substrate, the first and second semiconductor layers having different material compositions and alternating with one another within the stack; forming a dummy gate structure over the stack, the dummy gate structure wrapping around top and sidewall surfaces of the stack; forming a gate spacer on sidewalls of the dummy gate structure and disposed on the top of the stack; forming a dielectric layer with the dummy gate embedded therein; removing the dummy gate structure, resulting in a gate trench; removing the second semiconductor layers through the gate trench such that the first semiconductor layers form semiconductor sheets; forming a metal gate wrapping around the semiconductor sheets; and thereafter, forming a source/drain feature adjacent the metal gate and connecting to the semiconductor sheets.
