18156917. IN-SITU FOCUS RING COATING simplified abstract (Tokyo Electron Limited)
Contents
IN-SITU FOCUS RING COATING
Organization Name
Inventor(s)
Minjoon Park of Albany NY (US)
IN-SITU FOCUS RING COATING - A simplified explanation of the abstract
This abstract first appeared for US patent application 18156917 titled 'IN-SITU FOCUS RING COATING
The method described in the patent application involves etching a substrate in a plasma etch chamber with a focus ring that has a surface layer containing a refractory metal.
- Loading the substrate into a plasma etch chamber with a focus ring made of a bulk material and a surface layer containing a refractory metal.
- Flowing a process gas with fluorine and carbon into the chamber.
- Coating a carbide layer over the surface layer of the focus ring by exposing it to a plasma generated from the process gas.
- Etching the substrate by exposing it to the plasma.
Potential Applications: - Semiconductor manufacturing - Microelectronics fabrication - Thin film deposition processes
Problems Solved: - Improving etching precision and uniformity - Enhancing the durability of focus rings in plasma etch chambers
Benefits: - Increased efficiency in substrate etching processes - Extended lifespan of focus rings - Enhanced quality of etched substrates
Commercial Applications: - Equipment manufacturers for semiconductor industry - Research institutions focusing on plasma etching technologies
Questions about the technology: 1. How does the carbide layer improve the performance of the focus ring in the plasma etch chamber? 2. What specific types of substrates are most suitable for this etching method?
Frequently Updated Research: - Ongoing studies on the impact of different carbide coatings on focus ring longevity in plasma etch chambers.
Original Abstract Submitted
A method of etching a substrate includes loading the substrate into a plasma etch chamber, the plasma etch chamber including a focus ring surrounding the substrate, the focus ring including a bulk material and a surface layer, the surface layer including a refractory metal; flowing a process gas including fluorine and carbon into the plasma etch chamber; coating a carbide layer over the surface layer of the focus ring, the coating including exposing the focus ring to a plasma generated from the process gas in the plasma etch chamber, the carbide layer including a carbide of the refractory metal; and etching the substrate, the etching including exposing the substrate to the plasma.
