18152938. SEMICONDUCTOR STRUCTURE AND METHOD OF FORMING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
Contents
- 1 SEMICONDUCTOR STRUCTURE AND METHOD OF FORMING THE SAME
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 SEMICONDUCTOR STRUCTURE AND METHOD OF FORMING THE SAME - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Original Abstract Submitted
SEMICONDUCTOR STRUCTURE AND METHOD OF FORMING THE SAME
Organization Name
Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor(s)
Wang-Chun Huang of Kaohsiung City (TW)
SEMICONDUCTOR STRUCTURE AND METHOD OF FORMING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 18152938 titled 'SEMICONDUCTOR STRUCTURE AND METHOD OF FORMING THE SAME
Simplified Explanation
The method described in the abstract involves forming a semiconductor structure by creating a fin structure with alternating semiconductor material layers, adding spacer and inter-layer dielectric layers, recessing the structure to form an opening, and finally forming a gate structure around the remaining semiconductor material layers.
- Formation of fin structure with alternating semiconductor material layers
- Addition of spacer and inter-layer dielectric layers
- Recessing the structure to create an opening
- Forming a gate structure around the remaining semiconductor material layers
Potential Applications
The technology described in this patent application could be applied in the manufacturing of advanced semiconductor devices, such as high-performance transistors for electronic devices.
Problems Solved
This technology addresses the need for improved semiconductor structures with enhanced performance and efficiency, by providing a method for forming a complex fin structure with precise control over the semiconductor materials used.
Benefits
The benefits of this technology include increased performance, reduced power consumption, and improved reliability of semiconductor devices due to the optimized structure and materials used in the manufacturing process.
Potential Commercial Applications
The potential commercial applications of this technology could include the production of next-generation processors, memory chips, and other semiconductor components for various electronic devices.
Possible Prior Art
One possible prior art for this technology could be the use of similar methods for forming semiconductor structures with alternating material layers, although the specific process described in this patent application may offer unique advantages in terms of performance and efficiency.
Unanswered Questions
How does this technology compare to existing methods for forming semiconductor structures?
This article does not provide a direct comparison to existing methods for forming semiconductor structures, so it is unclear how this technology differs or improves upon current practices.
What are the potential limitations or challenges in implementing this method on a large scale in semiconductor manufacturing facilities?
The article does not address the potential limitations or challenges in scaling up this method for mass production in semiconductor manufacturing facilities, leaving room for further exploration and analysis in this area.
Original Abstract Submitted
A method for forming a semiconductor structure is provided. The method includes forming a fin structure protruding from a substrate. The fin structure includes alternately stacked first semiconductor material layers and second semiconductor material layers. The method includes forming a spacer layer over the fin structure. The method includes forming a first inter-layer dielectric (ILD) layer over the spacer layer. The method also includes recessing the fin structure and the first ILD layer to form a first opening through the first ILD layer. The method further includes forming an epitaxial structure in the first opening, and forming a second ILD layer over the epitaxial structure and the first ILD layer. In addition, the method includes removing the first semiconductor material layers, and forming a gate structure around the second semiconductor material layers.
