18152122. MEMORY DEVICE simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
Contents
MEMORY DEVICE
Organization Name
Taiwan Semiconductor Manufacturing Company, Ltd.
Inventor(s)
Elia Ambrosi of Hsinchu City (TW)
Cheng-Hsien Wu of Hsinchu City (TW)
MEMORY DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18152122 titled 'MEMORY DEVICE
Simplified Explanation
Abstract
A memory device is described in this patent application. The device consists of memory cells, each containing a resistance variable storage device and a selector. The selector is stacked on top of the storage device and connected to it through a shared terminal. The selector includes a switching layer made of a chalcogenide compound, with a thickness of 5 nm or less.
Bullet Points
- Memory device with memory cells
- Each cell has a resistance variable storage device and a selector
- Selector is stacked on top of the storage device and connected through a shared terminal
- Selector includes a switching layer made of a chalcogenide compound
- Thickness of the switching layer is 5 nm or less
Potential Applications
- Computer memory systems
- Data storage devices
- Solid-state drives (SSDs)
- Internet of Things (IoT) devices
- Wearable technology
Problems Solved
- Improved memory cell design
- Enhanced performance and reliability of memory devices
- Increased data storage capacity
- Reduced power consumption
Benefits
- Higher data storage density
- Faster read and write speeds
- Lower power consumption
- Improved durability and reliability of memory devices
Original Abstract Submitted
A memory device is provided. The memory device includes memory cells. Each of the memory cells includes: a resistance variable storage device; and a selector. The selector is stacked with the resistance variable storage device and coupled to the resistance variable storage device with a shared terminal, and includes a switching layer formed of a chalcogenide compound. A thickness of the switching layer is equal to or less than about 5 nm.
