18151770. SENSORS AND ELECTRONIC DEVICES simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
Contents
SENSORS AND ELECTRONIC DEVICES
Organization Name
Inventor(s)
Kyung Bae Park of Hwaseong-si (KR)
Sung Jun Park of Yongin-si (KR)
Sung Young Yun of Suwon-si (KR)
Seon-Jeong Lim of Yongin-si (KR)
SENSORS AND ELECTRONIC DEVICES - A simplified explanation of the abstract
This abstract first appeared for US patent application 18151770 titled 'SENSORS AND ELECTRONIC DEVICES
Simplified Explanation
The patent application describes a sensor that includes two electrodes and a photo-active layer between them. The photo-active layer contains a light absorbing semiconductor that forms a Schottky junction with the first electrode. The layer also has a charge carrier trapping site that captures photo-generated charge carriers produced when the semiconductor absorbs incident light near the first electrode. The sensor's external quantum efficiency (EQE) can be adjusted by applying a voltage bias between the two electrodes.
- The sensor includes two electrodes and a photo-active layer.
- The photo-active layer contains a light absorbing semiconductor that forms a Schottky junction with the first electrode.
- The layer has a charge carrier trapping site that captures photo-generated charge carriers.
- The charge carriers are generated when the semiconductor absorbs incident light near the first electrode.
- The sensor's external quantum efficiency (EQE) can be adjusted by applying a voltage bias between the two electrodes.
Potential Applications
This technology has potential applications in various fields, including:
- Photovoltaics: The sensor can be used in solar cells to efficiently capture and convert incident light into electricity.
- Imaging: The sensor can be utilized in cameras and imaging devices to detect and capture light, enabling high-quality image capture.
- Environmental Monitoring: The sensor can be employed in environmental monitoring systems to measure light intensity and analyze environmental conditions.
- Optical Communications: The sensor can be integrated into optical communication systems to detect and amplify optical signals.
Problems Solved
The technology addresses several problems in the field of light sensing and detection, including:
- Low Efficiency: The sensor's design and configuration allow for efficient capture and utilization of incident light, improving overall efficiency.
- Charge Carrier Trapping: The presence of a charge carrier trapping site helps capture and retain photo-generated charge carriers, enhancing the sensor's performance.
- Voltage Bias Adjustment: The ability to adjust the external quantum efficiency (EQE) through voltage biasing provides flexibility and control over the sensor's sensitivity and response.
Benefits
The technology offers several benefits, including:
- Improved Efficiency: The sensor's design and charge carrier trapping mechanism result in higher efficiency in capturing and utilizing incident light.
- Adjustable Sensitivity: The ability to adjust the EQE through voltage biasing allows for fine-tuning the sensor's sensitivity to different light intensities.
- Versatility: The sensor can be applied in various applications, including photovoltaics, imaging, environmental monitoring, and optical communications.
- Enhanced Performance: The presence of a charge carrier trapping site enhances the sensor's performance by capturing and retaining photo-generated charge carriers.
Original Abstract Submitted
A sensor includes a first electrode and a second electrode, and a photo-active layer between the first electrode and the second electrode. The photo-active layer includes a light absorbing semiconductor configured to form a Schottky junction with the first electrode. The photo-active layer has a charge carrier trapping site configured to capture photo-generated charge carriers generated based on the light absorbing semiconductor absorbing incident light that enters at least the photo-active layer at a position adjacent to the first electrode. The sensor is configured to have an external quantum efficiency (EQE) that is adjusted based on a voltage bias being applied between the first electrode and the second electrode.
