18151629. INTEGRATED CIRCUIT PACKAGE AND METHOD simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
Contents
INTEGRATED CIRCUIT PACKAGE AND METHOD
Organization Name
Taiwan Semiconductor Manufacturing Company, Ltd.
Inventor(s)
Kuo-Chiang Ting of Hsinchu (TW)
Sung-Feng Yeh of Taipei City (TW)
INTEGRATED CIRCUIT PACKAGE AND METHOD - A simplified explanation of the abstract
This abstract first appeared for US patent application 18151629 titled 'INTEGRATED CIRCUIT PACKAGE AND METHOD
Simplified Explanation: The semiconductor device described in the patent application consists of two semiconductor packages bonded together, with a heat dissipation structure attached to one of the packages.
- The device includes a first semiconductor package with an interconnect structure on a substrate, through substrate vias, and a second semiconductor package directly bonded to the first package.
- A silicon layer is present on the surface of the second semiconductor package, opposite to the first package.
- A heat dissipation structure is attached to the silicon layer to help dissipate heat efficiently.
Key Features and Innovation:
- Integration of two semiconductor packages with different interconnect structures.
- Use of through substrate vias for electrical coupling.
- Incorporation of a silicon layer for improved heat dissipation.
Potential Applications:
- High-performance computing systems.
- Data centers.
- Telecommunications equipment.
Problems Solved:
- Efficient heat dissipation in semiconductor devices.
- Enhanced electrical connectivity between semiconductor packages.
Benefits:
- Improved overall performance and reliability of semiconductor devices.
- Better thermal management leading to longer lifespan of the devices.
Commercial Applications: The technology can be applied in the development of advanced electronic devices for various industries, including telecommunications, computing, and data storage.
Questions about Semiconductor Devices: 1. How does the integration of two semiconductor packages improve overall device performance? 2. What are the advantages of using through substrate vias for electrical coupling in semiconductor devices?
Original Abstract Submitted
A semiconductor device includes a first semiconductor package comprising: a first interconnect structure on a first semiconductor substrate; through substrate vias electrically coupled to the first interconnect structure extending through the first semiconductor substrate; and a second semiconductor package directly bonded to the first semiconductor package, the second semiconductor package comprising a second semiconductor substrate and a second interconnect structure on the second semiconductor substrate. The semiconductor device further includes a silicon layer on a surface of the second semiconductor package that is opposite to the first semiconductor package; and a heat dissipation structure attached to the silicon layer.
