18151008. SEMICONDUCTOR DEVICE AND METHOD simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)

SEMICONDUCTOR DEVICE AND METHOD

Organization Name

Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor(s)

Ching-Yu Huang of Hsinchu (TW)

Ting-Chu Ko of Hsinchu (TW)

Der-Chyang Yeh of Hsinchu (TW)

SEMICONDUCTOR DEVICE AND METHOD - A simplified explanation of the abstract

This abstract first appeared for US patent application 18151008 titled 'SEMICONDUCTOR DEVICE AND METHOD

Simplified Explanation

The embodiment described in the abstract involves a method for forming interconnect structures on a substrate, including the formation of probe pads and bond pads for electrical connections.

• The method includes forming a first interconnect structure on a substrate, with dielectric layers and metallization patterns.
• A passivation layer is then formed over the top metal structures of the interconnect structure.
• A probe pad is created in an opening through the passivation layer, which is electrically connected to the top metal structure.
• A circuit probe test is performed on the probe pad before it is removed.
• Finally, bond pads and bond vias are formed over the passivation layer, electrically coupled to other top metal structures.

Potential Applications

This technology can be applied in semiconductor manufacturing processes, specifically in the production of integrated circuits and electronic devices.

Problems Solved

This method helps in testing and ensuring the functionality of interconnect structures in semiconductor devices before final assembly, reducing the risk of defects and improving overall product quality.

Benefits

The use of probe pads and bond pads allows for efficient testing and connection of different metal structures in the interconnect layers, leading to reliable and high-performance semiconductor devices.

Potential Commercial Applications

This technology can be utilized in the production of various electronic devices, such as microprocessors, memory chips, and sensors, to enhance their performance and reliability.

Possible Prior Art

One possible prior art in this field could be the use of similar methods for testing and connecting interconnect structures in semiconductor devices, but with variations in the specific processes and materials used.

How does this method compare to traditional testing techniques for interconnect structures in semiconductor devices?

This article does not provide a direct comparison with traditional testing techniques, leaving the reader to wonder about the specific advantages and limitations of this new method.

What are the potential challenges or limitations of implementing this technology in large-scale semiconductor manufacturing processes?

The article does not address the scalability or practicality of this method in mass production settings, leaving room for questions about its feasibility and cost-effectiveness on an industrial scale.

Original Abstract Submitted

An embodiment is a method including forming a first interconnect structure over a first substrate, the first interconnect structure including dielectric layers and metallization patterns therein, the metallization patterns including a top metal layer including top metal structures, forming a passivation layer over the top metal structures of the first interconnect structure, forming a first opening through the passivation layer, forming a probe pad in the first opening and over the passivation layer, the probe pad being electrically connected to the first top metal structure, performing a circuit probe test on the probe pad, removing the probe pad, and forming a bond pad and a bond via in dielectric layers over the passivation layer, the bond pad and bond via being electrically coupled to a second top metal structure of the top metal structures and a third top metal structure of the top metal structures.