18150545. SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
Contents
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
Organization Name
Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor(s)
Wei-Chih Hou of Hsinchu city (TW)
Chun-Jun Lin of Hsinchu city (TW)
Feng-Ming Chang of Taitung city (TW)
Shu-Ning Hsu of Taichung City (TW)
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - A simplified explanation of the abstract
This abstract first appeared for US patent application 18150545 titled 'SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
The method described in the abstract involves depositing an epitaxial stack over a substrate, with alternating first semiconductor layers and second semiconductor layers. A dielectric wall is formed within the epitaxial stack, and specific subsets of semiconductor layers are removed on either side of the wall. Gate structures are then formed around these subsets of semiconductor layers.
- The method involves creating a complex structure with alternating semiconductor layers and a dielectric wall.
- Specific subsets of semiconductor layers are selectively removed to create distinct regions within the structure.
- Gate structures are formed around these regions to control the flow of electrical current.
- This method allows for precise control and manipulation of semiconductor materials in the structure.
Potential Applications: - This technology could be applied in the manufacturing of advanced semiconductor devices. - It may find use in the development of high-performance transistors and integrated circuits.
Problems Solved: - Enables precise control over semiconductor materials in a complex structure. - Facilitates the creation of advanced electronic devices with enhanced functionality.
Benefits: - Improved performance and efficiency of semiconductor devices. - Enhanced capabilities for designing and fabricating complex electronic components.
Commercial Applications: Title: Advanced Semiconductor Device Fabrication Method This technology could be utilized in the production of cutting-edge electronic devices, such as high-speed processors, memory chips, and sensors. The method offers a way to optimize semiconductor structures for improved performance and functionality, making it valuable in the semiconductor industry.
Questions about the Technology: 1. How does the formation of gate structures impact the functionality of the semiconductor device? 2. What are the specific semiconductor compositions used in the first and second semiconductor layers?
Original Abstract Submitted
A method includes depositing an epitaxial stack over a substrate, the epitaxial stack comprising alternating first semiconductor layers and second semiconductor layers, wherein the first semiconductor layers comprise a different semiconductor composition from that of the second semiconductor layers; forming a dielectric wall in the epitaxial stack; removing a first subset of the first semiconductor layers on a first side of the dielectric wall, while leaving a first subset of the second semiconductor layers on the first side of the dielectric wall; removing a second subset of the second semiconductor layers on a second side of the dielectric wall, while leaving a second subset of the first semiconductor layers on the second side of the dielectric wall; forming a first gate structure around the first subset of the second semiconductor layers; and forming a second gate structure around the second subset of the first semiconductor layers.
