18149402. SEMICONDUCTOR DEVICE simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)

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SEMICONDUCTOR DEVICE

Organization Name

Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor(s)

Jhon-Jhy Liaw of Zhudong Township (TW)

SEMICONDUCTOR DEVICE - A simplified explanation of the abstract

This abstract first appeared for US patent application 18149402 titled 'SEMICONDUCTOR DEVICE

The patent application describes semiconductor devices with dual-port memory cells. The devices include first and second inverters, each with pull-up and pull-down transistors connected in parallel.

  • First inverter: Includes first pull-up transistor, first and second pull-down transistors in parallel.
  • Second inverter: Includes second pull-up transistor, third and fourth pull-down transistors in parallel.
  • First and second pass-gate transistors form first port connected to the first inverter.
  • Third and fourth pass-gate transistors form second port connected to the second inverter.
  • First pass-gate transistors and first pull-down transistors share first continuous active region.
  • Third pass-gate transistors and fourth pull-down transistors share second continuous active region.
  • First pull-up transistors and isolation transistors share third continuous active region.
  • Gates of isolation transistors are connected to VDD line, while their sources are floating.

Potential Applications: - Memory storage devices - Integrated circuits - Computer processors

Problems Solved: - Efficient memory cell design - Enhanced data storage capabilities

Benefits: - Improved memory cell performance - Increased data processing speed

Commercial Applications: Title: "Advanced Dual-Port Memory Cells for High-Performance Computing" This technology can be utilized in high-speed computing systems, data centers, and advanced electronic devices to enhance memory storage and processing capabilities.

Questions about Dual-Port Memory Cells: 1. How do dual-port memory cells differ from single-port memory cells? Dual-port memory cells allow for simultaneous read and write operations on separate ports, enhancing data access speed and efficiency.

2. What are the advantages of using dual-port memory cells in computer processors? Dual-port memory cells can improve overall system performance by enabling faster data transfers and reducing bottlenecks in data processing.


Original Abstract Submitted

Semiconductor devices with dual-port memory cells are provided. First inverter includes first pull-up transistor, and first and second pull-down transistors connected in parallel. Second inverter includes second pull-up transistor, and third and fourth pull-down transistors connected in parallel. First and second pass-gate transistors are coupled to the first inverter to form a first port. Third and fourth pass-gate transistors are coupled to the second inverter to form a second port. First and second pass-gate transistors and the first and third pull-down transistors share first continuous active region. The third and fourth pass-gate transistors and the second and fourth pull-down transistors share a second continuous active region. The first and second pull-up transistors and first and second isolation transistors share a third continuous active region. Gates of the first and second isolation transistors are electrically connected to VDD line. Sources of the first and second isolation transistors are floating.

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