18148871. FIELD EFFECT TRANSISTOR COMPRISING TRANSITION METAL DICHALCOGENIDE (TMD) AND FERROELECTRIC MATERIAL simplified abstract (Intel Corporation)

FIELD EFFECT TRANSISTOR COMPRISING TRANSITION METAL DICHALCOGENIDE (TMD) AND FERROELECTRIC MATERIAL

Organization Name

Intel Corporation

Inventor(s)

Hojoon Ryu of Urbana IL (US)

Punyashloka Debashis of Hillsboro OR (US)

Rachel A. Steinhardt of Beaverton OR (US)

Kevin P. O'brien of Portland OR (US)

John J. Plombon of Portland OR (US)

Dmitri Evgenievich Nikonov of Beaverton OR (US)

Ian Alexander Young of Olympia WA (US)

FIELD EFFECT TRANSISTOR COMPRISING TRANSITION METAL DICHALCOGENIDE (TMD) AND FERROELECTRIC MATERIAL - A simplified explanation of the abstract

This abstract first appeared for US patent application 18148871 titled 'FIELD EFFECT TRANSISTOR COMPRISING TRANSITION METAL DICHALCOGENIDE (TMD) AND FERROELECTRIC MATERIAL

Simplified Explanation: The patent application describes an apparatus that includes a field-effect transistor with a ferroelectric material, a channel material made of a transition metal and a chalcogen, and a source and drain connected to the channel material, which are made of a conductive material.

• The apparatus comprises a field-effect transistor with a ferroelectric material.
• The channel material is composed of a transition metal and a chalcogen.
• The source and drain are coupled to the channel material and are made of a conductive material.

Key Features and Innovation:

• Integration of a ferroelectric material in a field-effect transistor.
• Use of a transition metal and chalcogen in the channel material.
• Utilization of a conductive material for the source and drain.

Potential Applications: The technology could be applied in:

• Memory devices
• Logic circuits
• Sensor applications

Problems Solved:

• Enhanced performance and efficiency of field-effect transistors.
• Improved data retention in memory devices.
• Increased sensitivity in sensor applications.

Benefits:

• Higher performance levels.
• Improved data storage capabilities.
• Enhanced sensor sensitivity.

Commercial Applications: Potential commercial uses include:

• Semiconductor industry
• Electronics manufacturing
• Sensor technology market

Questions about the Technology: 1. How does the integration of a ferroelectric material impact the performance of the field-effect transistor? 2. What advantages does the use of a transition metal and chalcogen in the channel material provide?

Frequently Updated Research: Stay updated on the latest advancements in field-effect transistors, ferroelectric materials, and sensor technology to explore new possibilities and applications of this innovative technology.

Original Abstract Submitted

An apparatus, comprising a field effect transistor comprising a ferroelectric material, a channel material comprising a transition metal and a chalcogen, a source and a drain coupled to the channel material, the source and drain comprising a conductive material.