18148645. MICRO DEVICE WITH SHEAR PAD simplified abstract (TEXAS INSTRUMENTS INCORPORATED)
Contents
MICRO DEVICE WITH SHEAR PAD
Organization Name
TEXAS INSTRUMENTS INCORPORATED
Inventor(s)
Jeffrey A West of Dallas TX (US)
MICRO DEVICE WITH SHEAR PAD - A simplified explanation of the abstract
This abstract first appeared for US patent application 18148645 titled 'MICRO DEVICE WITH SHEAR PAD
Simplified Explanation
The abstract describes a method for etching multiple dielectric layers in a semiconductor device while exposing a bond pad. Here is a simplified explanation of the patent application:
- Form and pattern an etch assist layer on a first dielectric layer without covering a bond pad.
- Form and pattern a first photoresist layer on a second patterned conductive layer on the first dielectric, avoiding the bond pad.
- Etch the second dielectric layer to a specific depth.
- Etch the first and second dielectric layers using a second photoresist layer to a specific depth.
- Expose the bond pad by etching the first dielectric layer using a patterned third photoresist layer.
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- Potential Applications
This technology can be applied in the semiconductor industry for manufacturing advanced integrated circuits and electronic devices.
- Problems Solved
This technology solves the problem of accurately etching multiple dielectric layers while exposing specific areas like bond pads.
- Benefits
The benefits of this technology include improved precision in etching processes, leading to higher quality semiconductor devices with enhanced performance.
- Potential Commercial Applications of this Technology
The potential commercial applications of this technology include semiconductor fabrication companies looking to improve their manufacturing processes for advanced electronic components.
- Possible Prior Art
Prior art may include similar methods for etching dielectric layers in semiconductor devices, but the specific technique described in this patent application may offer unique advantages in terms of precision and control.
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- Unanswered Questions
- How does this method compare to traditional etching techniques in terms of efficiency and cost-effectiveness?
This article does not provide a direct comparison between this method and traditional etching techniques in terms of efficiency and cost-effectiveness.
- Are there any limitations or challenges associated with implementing this method on a large scale in semiconductor manufacturing facilities?
The article does not address any potential limitations or challenges associated with implementing this method on a large scale in semiconductor manufacturing facilities.
Original Abstract Submitted
An example method includes forming and patterning an etch assist layer on a first dielectric layer such that the etch assist layer is not over a first bond pad; forming and patterning a first photoresist layer on a second patterned conductive layer on the first dielectric, wherein the first photoresist layer is not over the first bond pad and etching the second dielectric layer to a depth of 5 to 15% of a thickness of the first dielectric layer and the second dielectric layer; etching the first dielectric layer and second dielectric layer using a second photoresist layer to a depth of 20 to 25%; and exposing the first bond pad by etching the first dielectric layer using a patterned third photoresist layer, such that an area of the dielectric layer exposed by the third opening adjacent to the bond pad is between 3-5 μm thick.
