18146988. FORMATION OF NON-SELF-ALIGNED BACKSIDE CONTACT simplified abstract (International Business Machines Corporation)
Contents
FORMATION OF NON-SELF-ALIGNED BACKSIDE CONTACT
Organization Name
International Business Machines Corporation
Inventor(s)
Tao Li of Slingerlands NY (US)
Kisik Choi of Watervliet NY (US)
Nicolas Jean Loubet of Guilderland NY (US)
Julien Frougier of Albany NY (US)
Ruilong Xie of Niskayuna NY (US)
FORMATION OF NON-SELF-ALIGNED BACKSIDE CONTACT - A simplified explanation of the abstract
This abstract first appeared for US patent application 18146988 titled 'FORMATION OF NON-SELF-ALIGNED BACKSIDE CONTACT
The semiconductor device described in the patent application includes a transistor device with source and drain regions, as well as a gate region. A bottom dielectric isolation layer is situated on the backside of the transistor device, followed by a buffer layer. A first conductive contact is positioned on the backside of the transistor device, connecting to the source and drain regions through the bottom dielectric isolation layer and buffer layer. Additionally, a second conductive contact is in contact with the gate region from the front side.
- The patent application introduces a semiconductor device with innovative backside contact configurations.
- The device features a bottom dielectric isolation layer and a buffer layer for improved performance.
- The first conductive contact enables connectivity to the source and drain regions through multiple layers.
- The second conductive contact provides a connection to the gate region from the front side.
- This technology aims to enhance the efficiency and functionality of semiconductor devices.
Potential Applications: - This technology can be applied in the development of advanced integrated circuits. - It may find use in the manufacturing of high-performance electronic devices.
Problems Solved: - Improved connectivity and performance in semiconductor devices. - Enhanced functionality and efficiency in electronic components.
Benefits: - Enhanced performance and efficiency in semiconductor devices. - Increased connectivity options for integrated circuits.
Commercial Applications: Title: Advanced Semiconductor Device Technology for Enhanced Performance This technology can be utilized in the production of high-performance electronic devices, leading to improved efficiency and functionality in various commercial applications such as consumer electronics, telecommunications, and computing.
Questions about Semiconductor Device Technology: 1. How does the backside contact configuration improve the performance of the semiconductor device? - The backside contact configuration allows for enhanced connectivity and efficiency in the device, leading to improved overall performance. 2. What are the potential commercial applications of this semiconductor device technology? - This technology can be applied in various industries such as consumer electronics, telecommunications, and computing, where high-performance electronic devices are required.
Original Abstract Submitted
A semiconductor device includes a transistor device, including a source and drain region, and a gate region. A bottom dielectric isolation layer is on a backside of the transistor device. A buffer layer is on a backside of the bottom dielectric isolation layer. A first conductive contact is positioned on a backside of the transistor device in contact with a backside of the source and drain region, through the bottom dielectric isolation layer and through the buffer layer. A second conductive contact is in contact with the gate region from a frontside of the gate region.
