18146344. MEMORY CELL WITH A VARIABLE ELEMENT AND A PHASE CHANGE MEMORY simplified abstract (International Business Machines Corporation)

MEMORY CELL WITH A VARIABLE ELEMENT AND A PHASE CHANGE MEMORY

Organization Name

International Business Machines Corporation

Inventor(s)

Ning Li of White Plains NY (US)

Andrew Herbert Simon of Fishkill NY (US)

Injo Ok of Albany NY (US)

Kangguo Cheng of Schenectady NY (US)

Timothy Mathew Philip of Albany NY (US)

Kevin W. Brew of Niskayuna NY (US)

Jin Ping Han of Yorktown Heights NY (US)

Juntao Li of Cohoes NY (US)

Nicole Saulnier of Slingerlands NY (US)

MEMORY CELL WITH A VARIABLE ELEMENT AND A PHASE CHANGE MEMORY - A simplified explanation of the abstract

This abstract first appeared for US patent application 18146344 titled 'MEMORY CELL WITH A VARIABLE ELEMENT AND A PHASE CHANGE MEMORY

The abstract of the patent application describes an electrical device that includes a first electrode in series with a second electrode, a phase change memory (PCM) in series with the second electrode, and a variable electrical element in series with the phase change memory.

• The device consists of a first electrode connected in series with a second electrode.
• A phase change memory (PCM) is integrated into the circuit in series with the second electrode.
• A variable electrical element is also included in series with the phase change memory.
• The combination of these components allows for unique electrical functionality within the device.
• The device likely utilizes the phase change properties of the PCM to achieve specific electrical outcomes.

Potential Applications:

• This technology could be used in electronic devices that require non-volatile memory storage.
• It may find applications in data storage devices, wearable technology, and IoT devices.

Problems Solved:

• Provides a compact and efficient solution for integrating phase change memory into electrical devices.
• Offers a way to control and manipulate electrical properties within a circuit.

Benefits:

• Improved performance and reliability in electronic devices.
• Enhanced data storage capabilities.
• Potential for smaller and more energy-efficient devices.

Commercial Applications:

• This technology could be valuable in the development of next-generation electronic devices, leading to advancements in consumer electronics, data storage solutions, and IoT technology.

Questions about the technology: 1. How does the integration of the phase change memory impact the overall performance of the electrical device? 2. What are the potential limitations or challenges associated with using a variable electrical element in series with the phase change memory?

Original Abstract Submitted

An electrical device includes a first electrode in series with a second electrode. A phase change memory (PCM) is in series with the second electrode. A variable electrical element is in series with the phase change memory.