18146255. MAGNETIC RANDOM ACCESS MEMORY STRUCTURE simplified abstract (INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE)

From WikiPatents
Jump to navigation Jump to search

MAGNETIC RANDOM ACCESS MEMORY STRUCTURE

Organization Name

INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE

Inventor(s)

Hsin-Han Lee of Hsinchu City (TW)

Jeng-Hua Wei of Taipei City (TW)

Shan-Yi Yang of Hsinchu City (TW)

Yu-Chen Hsin of Tainan City (TW)

MAGNETIC RANDOM ACCESS MEMORY STRUCTURE - A simplified explanation of the abstract

This abstract first appeared for US patent application 18146255 titled 'MAGNETIC RANDOM ACCESS MEMORY STRUCTURE

Simplified Explanation

The abstract describes a magnetic random access memory (MRAM) structure consisting of two magnetic tunnel junction (MTJ) stacks separated by a voltage control electrode.

  • The MRAM structure includes:
    • First write electrode
    • First MTJ stack with a first free layer, first tunnel barrier layer, and first fixed layer
    • Voltage control electrode
    • Second MTJ stack with a second fixed layer, second tunnel barrier layer, and second free layer
    • Second write electrode
    • Potential Applications:**

This technology can be applied in data storage devices, computer memory, and other electronic devices requiring non-volatile memory.

    • Problems Solved:**

This MRAM structure provides a more efficient and reliable way to store data compared to traditional memory technologies.

    • Benefits:**

- Faster data access and retrieval - Lower power consumption - Increased data retention

    • Potential Commercial Applications of MRAM Technology:**

Optimizing data storage in smartphones, tablets, laptops, and other portable electronic devices.

    • Possible Prior Art:**

Previous MRAM structures may have similar components but lack the specific arrangement and configuration described in this patent application.

    • Unanswered Questions:**

1. How does the voltage control electrode affect the performance of the MRAM structure? 2. Are there any limitations or drawbacks to using this MRAM technology in practical applications?


Original Abstract Submitted

A magnetic random access memory (MRAM) structure is provided. The MRAM structure includes a first write electrode, a first magnetic tunnel junction (MTJ) stack, a voltage control electrode, a second MTJ stack, and a second write electrode. The first MTJ stack includes a first free layer disposed on the first write electrode, a first tunnel barrier layer disposed on the first free layer, and a first fixed layer disposed on the first tunnel barrier layer. The voltage control electrode is disposed on the first MTJ stack. The second MTJ stack includes a second fixed layer disposed on the voltage control electrode, a second tunnel barrier layer disposed on the second fixed layer, and a second free layer disposed on the second tunnel barrier layer. The second write electrode is disposed on the second MTJ stack.

Retrieved from "http://wikipatents.org/index.php?title=18146255._MAGNETIC_RANDOM_ACCESS_MEMORY_STRUCTURE_simplified_abstract_(INDUSTRIAL_TECHNOLOGY_RESEARCH_INSTITUTE)&oldid=65639"