18146253. System and Method for Plasma Processing simplified abstract (Tokyo Electron Limited)
Contents
System and Method for Plasma Processing
Organization Name
Inventor(s)
Merritt Funk of Austin TX (US)
System and Method for Plasma Processing - A simplified explanation of the abstract
This abstract first appeared for US patent application 18146253 titled 'System and Method for Plasma Processing
The abstract describes an apparatus for plasma processing that includes an RF power source and resonating structures with a first region and a second region. The first region has a first antenna and a first coupling circuit to adjust power distribution, while the second region includes a second antenna.
- RF power source and resonating structures for plasma processing
- First region with first antenna and first coupling circuit
- Second region with second antenna
- First coupling circuit adjusts power distribution
- Apparatus designed for efficient plasma processing
Potential Applications: - Semiconductor manufacturing - Thin film deposition - Surface cleaning processes
Problems Solved: - Improved power distribution in plasma processing - Enhanced efficiency and control over plasma treatment
Benefits: - Higher quality and more precise plasma processing - Increased productivity and cost-effectiveness in manufacturing processes
Commercial Applications: Title: Advanced Plasma Processing Apparatus for Semiconductor Manufacturing This technology can be used in semiconductor fabrication facilities to enhance the quality and efficiency of plasma processing, leading to improved production yields and cost savings.
Questions about Plasma Processing Apparatus: 1. How does the first coupling circuit impact power distribution in the apparatus? The first coupling circuit in the first region of the resonating structures is designed to adjust the power distribution, ensuring efficient plasma processing.
2. What are the potential benefits of using this apparatus in semiconductor manufacturing? This apparatus can lead to higher quality plasma processing, increased productivity, and cost-effectiveness in semiconductor manufacturing processes.
Original Abstract Submitted
An apparatus for plasma processing includes an RF power source and a set of resonating structures coupled to the RF power source. The resonating structures include a first region and a second region adjacent to the second region. The first region includes a first antenna and a first coupling circuit, the first coupling circuit being outside a coupling of the RF power source to the first region, where the first coupling circuit is configured to adjust a power distribution of the first region. The second region includes a second antenna.
