18145460. IMAGE SENSOR simplified abstract (Samsung Electronics Co., Ltd.)

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IMAGE SENSOR

Organization Name

Samsung Electronics Co., Ltd.

Inventor(s)

Jaekyu Lee of Seongnam-si (KR)

Heesung Shim of Seoul (KR)

IMAGE SENSOR - A simplified explanation of the abstract

This abstract first appeared for US patent application 18145460 titled 'IMAGE SENSOR

Simplified Explanation

The abstract describes an image sensor that consists of multiple pixels arranged in rows and columns. Each pixel includes a photodiode, a floating diffusion node to accumulate photocharges, and two capacitors to store charges based on the voltage of the floating diffusion node. There are also three transistors: a first sampling transistor to sample charges to the first capacitor, a second sampling transistor to sample charges to the second capacitor, and at least one precharge select transistor to reset the first output node.

  • The image sensor has a pixel structure with a photodiode, floating diffusion node, and capacitors.
  • It includes multiple transistors for sampling charges and resetting the output node.
  • The sensor is organized in rows and columns to capture and store image data.

Potential Applications

  • Digital cameras
  • Mobile phones
  • Surveillance systems
  • Medical imaging devices

Problems Solved

  • Efficiently capturing and storing image data
  • Improving the performance of image sensors
  • Enhancing the quality of images captured by the sensor

Benefits

  • Higher image quality and resolution
  • Improved low-light performance
  • Faster image capture and processing
  • Reduced noise and distortion in images


Original Abstract Submitted

An image sensor is disclosed. The image sensor includes a plurality of pixels arranged in a plurality of rows and a plurality of columns, each of the pixels including: a photodiode; a floating diffusion node configured to accumulate photocharges generated from the photodiode; a first capacitor configured to store charges according to a voltage of the floating diffusion node which is reset; a second capacitor configured to store charges according to a voltage of the floating diffusion node in which the photocharges are accumulated; a first sampling transistor connected to a first output node and configured to sample charges to the first capacitor; a second sampling transistor connected to the first output node and configured to sample charges to the second capacitor; and at least one precharge select transistor connected to the first output node and configured to reset the first output node.