18145059. VTFET CELL BOUNDARY HAVING AN IN-LINE CONTACT simplified abstract (International Business Machines Corporation)

VTFET CELL BOUNDARY HAVING AN IN-LINE CONTACT

Organization Name

International Business Machines Corporation

Inventor(s)

Brent A. Anderson of Jericho VT (US)

Albert M. Chu of Nashua NH (US)

Ruilong Xie of Niskayuna NY (US)

Lawrence A. Clevenger of Saratoga Springs NY (US)

Nicholas Anthony Lanzillo of Wynantskill NY (US)

Reinaldo Vega of Mahopac NY (US)

VTFET CELL BOUNDARY HAVING AN IN-LINE CONTACT - A simplified explanation of the abstract

This abstract first appeared for US patent application 18145059 titled 'VTFET CELL BOUNDARY HAVING AN IN-LINE CONTACT

The multi-layer integrated circuit structure described in the abstract includes a cell with a cell boundary defined by transistor-gate pitch (TGP) regions and an in-line contact region.

• The TGP regions consist of a reduced-area TGP region and non-reduced area TGP regions, with the reduced-area TGP region being smaller than each non-reduced area TGP region.
• An in-line contact within the in-line contact region is used to electrically connect to a source or drain region within the in-line contact region.

Potential Applications:

• This technology can be applied in the semiconductor industry for the development of advanced integrated circuits.
• It can be used in the manufacturing of high-performance electronic devices such as smartphones, computers, and other consumer electronics.

Problems Solved:

• The technology addresses the need for more compact and efficient integrated circuit structures.
• It helps improve the performance and functionality of electronic devices by enhancing the connectivity within the circuit.

Benefits:

• Increased efficiency and performance of integrated circuits.
• Enhanced connectivity and functionality of electronic devices.
• Reduction in the size of integrated circuit structures, leading to more compact devices.

Commercial Applications:

• This technology has significant commercial potential in the semiconductor industry for the production of advanced electronic devices.
• It can be utilized by semiconductor manufacturers to enhance the performance and functionality of their products, gaining a competitive edge in the market.

Questions about the Technology: 1. How does the reduced-area TGP region contribute to the overall efficiency of the integrated circuit structure? 2. What are the specific advantages of using an in-line contact region in this technology?

Frequently Updated Research: Ongoing research in the semiconductor industry focuses on further optimizing the design and performance of multi-layer integrated circuit structures to meet the increasing demands for faster and more efficient electronic devices.

Original Abstract Submitted

Embodiments of the invention provide a multi-layer integrated circuit (IC) structure that includes a cell having a cell boundary defined by a plurality of transistor-gate pitch (TGP) regions and an in-line contact region. The plurality of TGP regions include a reduced-area TGP region and non-reduced area TGP regions. The reduced-area TGP region is less than each of the non-reduced-area TGP regions. An in-line contact is within the in-line contact region and operable to electrically couple to a source or drain (S/D) region within the in-line contact region.