18145038. PRECURSORS AND METHODS FOR PRODUCING BISMUTH-OXY-CARBIDE-BASED PHOTORESIST simplified abstract (Intel Corporation)
Contents
PRECURSORS AND METHODS FOR PRODUCING BISMUTH-OXY-CARBIDE-BASED PHOTORESIST
Organization Name
Inventor(s)
Charles Cameron Mokhtarzadeh of Portland OR (US)
James Blackwell of Portland OR (US)
Scott Semproni of Portland OR (US)
Scott B. Clendenning of Portland OR (US)
PRECURSORS AND METHODS FOR PRODUCING BISMUTH-OXY-CARBIDE-BASED PHOTORESIST - A simplified explanation of the abstract
This abstract first appeared for US patent application 18145038 titled 'PRECURSORS AND METHODS FOR PRODUCING BISMUTH-OXY-CARBIDE-BASED PHOTORESIST
The abstract of this patent application discusses the disclosure of precursors and methods related to a bismuth oxy-carbide-based photoresist.
- Method for forming a bismuth oxy-carbide-based photoresist by exposing a bismuth-containing precursor and a co-reagent to a substrate.
- The bismuth oxy-carbide-based photoresist has a formula BiOCon on the substrate, with specific values for x, y, and z.
- The bismuth-containing precursor has a formula R′Bi(NR)2 or R′BiNR3, with specific R and NR groups.
- The co-reagent can include water, hydrogen peroxide, oxygen, ozone, formic acid, maleic acid, or an alcohol.
- Potential Applications
This technology can be used in the semiconductor industry for photolithography processes, specifically in the fabrication of integrated circuits.
- Problems Solved
This technology addresses the need for high-resolution photoresists with improved sensitivity and environmental stability for advanced semiconductor manufacturing processes.
- Benefits
The bismuth oxy-carbide-based photoresist offers enhanced resolution, sensitivity, and environmental stability compared to traditional photoresist materials, leading to improved semiconductor device performance.
- Commercial Applications
The commercial applications of this technology include semiconductor manufacturing, photolithography equipment, and materials suppliers for the semiconductor industry.
- Prior Art
Researchers can explore prior art related to bismuth-based photoresists, advanced photoresist materials, and semiconductor manufacturing processes to understand the evolution of this technology.
- Frequently Updated Research
Researchers are continually exploring new formulations, processing techniques, and applications for bismuth oxy-carbide-based photoresists to enhance their performance and expand their use in semiconductor manufacturing.
- Questions about Bismuth Oxy-Carbide-Based Photoresist
1. What are the key advantages of using bismuth oxy-carbide-based photoresists in semiconductor manufacturing?
- Bismuth oxy-carbide-based photoresists offer improved resolution, sensitivity, and environmental stability, leading to enhanced semiconductor device performance.
2. How does the composition of bismuth oxy-carbide-based photoresists contribute to their performance in photolithography processes?
- The specific formula and structure of bismuth oxy-carbide-based photoresists enable high-resolution patterning and improved process control in semiconductor manufacturing.
Original Abstract Submitted
Precursors and methods related to a bismuth oxy-carbide-based photoresist are disclosed herein. In some embodiments, a method for forming a bismuth oxy-carbide-based photoresist may include exposing a bismuth-containing precursor and a co-reagent to a substrate to form a bismuth oxy-carbide-based photoresist having a formula BiOCon the substrate, where x is 1 or 2, y is between 2 and 4, and z is between 1 and 5, the bismuth-containing precursor having a formula R′Bi(NR)or R′BiNRwhere R includes methyl, ethyl, isopropyl, tert-butyl, or trimethylsilyl, or NRis piperidine, and R′ includes methyl, ethyl, isopropyl, tert-butyl, cyclo-pentyl, cyclo-hexyl, methyl trimethylsilyl, methyl 2-butyl, benzyl, 1-methyl 2-dimethyl propyl, or cyclopentadienyl. In some embodiments, the co-reagent includes water, hydrogen peroxide, oxygen, ozone, formic acid, maleic acid, or an alcohol.
