18145003. FORK SHEET DEVICE WITH WRAPPED SOURCE AND DRAIN CONTACT TO PREVENT NFET TO PFET CONTACT SHORTAGE IN A TIGHT SPACE simplified abstract (International Business Machines Corporation)

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FORK SHEET DEVICE WITH WRAPPED SOURCE AND DRAIN CONTACT TO PREVENT NFET TO PFET CONTACT SHORTAGE IN A TIGHT SPACE

Organization Name

International Business Machines Corporation

Inventor(s)

Shravana Kumar Katakam of Lehi UT (US)

Tao Li of Slingerlands NY (US)

Indira Seshadri of Niskayuna NY (US)

Ruilong Xie of Niskayuna NY (US)

FORK SHEET DEVICE WITH WRAPPED SOURCE AND DRAIN CONTACT TO PREVENT NFET TO PFET CONTACT SHORTAGE IN A TIGHT SPACE - A simplified explanation of the abstract

This abstract first appeared for US patent application 18145003 titled 'FORK SHEET DEVICE WITH WRAPPED SOURCE AND DRAIN CONTACT TO PREVENT NFET TO PFET CONTACT SHORTAGE IN A TIGHT SPACE

The microelectronic device described in the patent application includes a unique structure where a first source and drain structure is adjacent to a second source and drain structure.

  • The device features a first conductive contact in contact with the top and side surfaces of the first source and drain structure, as well as a second conductive contact in contact with the top and side surfaces of the second source and drain structure.
  • The second conductive contact includes a via extension to connect to a backside component, enhancing connectivity and functionality.
  • A separating layer is positioned between the first and second conductive contacts, with one sidewall flush with the first contact and the other sidewall flush with the second contact.

Potential Applications: - This technology could be applied in the development of advanced microelectronic devices for various industries such as telecommunications, computing, and consumer electronics.

Problems Solved: - The design of this device addresses the need for improved connectivity and functionality in microelectronic devices, enhancing overall performance.

Benefits: - Enhanced connectivity and functionality in microelectronic devices. - Improved performance and reliability in electronic systems.

Commercial Applications: - The technology could be utilized in the production of high-performance electronic devices for commercial use, potentially impacting industries such as telecommunications, computing, and consumer electronics.

Questions about the technology: 1. How does the via extension in the second conductive contact improve connectivity in the device? 

  - The via extension allows for a connection to a backside component, enhancing overall functionality and performance.

2. What are the potential market implications of this innovative microelectronic device design? 

  - The technology could lead to the development of more advanced and reliable electronic systems, potentially impacting various industries.


Original Abstract Submitted

A microelectronic device includes a first source and drain structure adjacent to a second source and drain structure. A first conductive contact is in contact with a top surface and side surface of the first source and drain structure. A second conductive contact is in contact with a top surface and side surface of the second source and drain structure. The second conductive contact includes a via extension to connect to a backside component. A separating layer is located between the first conductive contact and the second conductive contact. A first sidewall of the separating layer is flush with the first conductive contact. A second sidewall of the separating layer is flush with the second conductive contact.

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