18140905. INTEGRATED CIRCUIT DEVICES simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)

INTEGRATED CIRCUIT DEVICES

Organization Name

SAMSUNG ELECTRONICS CO., LTD.

Inventor(s)

Yoon Heo of Suwon-si (KR)

Seokhoon Kim of Suwon-si (KR)

Jungtaek Kim of Suwon-si (KR)

Pankwi Park of Suwon-si (KR)

Moonseung Yang of Suwon-si (KR)

Sumin Yu of Suwon-si (KR)

Seojin Jeong of Suwon-si (KR)

Edward Namkyu Cho of Suwon-si (KR)

Ryong Ha of Suwon-si (KR)

INTEGRATED CIRCUIT DEVICES - A simplified explanation of the abstract

This abstract first appeared for US patent application 18140905 titled 'INTEGRATED CIRCUIT DEVICES

Simplified Explanation

The abstract describes an integrated circuit device that includes multiple fin-type active areas on a substrate, with channel regions and gate lines surrounding them. The device also has source/drain regions adjacent to the gate lines and in contact with the channel regions, which include semiconductor layers and air gaps.

• The patent application describes an integrated circuit device with a unique structure of fin-type active areas, gate lines, and source/drain regions.
• The fin-type active areas are arranged in a first horizontal direction on a substrate.
• Channel regions are formed on the fin-type active areas.
• Gate lines surround the channel regions and extend in a second horizontal direction that crosses the first direction.
• Source/drain regions are positioned adjacent to the gate lines and in contact with the channel regions.
• The source/drain regions include semiconductor layers and at least one air gap.

Potential applications of this technology:

• This integrated circuit device can be used in various electronic devices, such as smartphones, tablets, and computers.
• It can be applied in the manufacturing of high-performance processors and memory chips.
• The unique structure of the device allows for improved performance and power efficiency in electronic devices.

Problems solved by this technology:

• The integration of fin-type active areas, gate lines, and source/drain regions provides a compact and efficient design for integrated circuits.
• The use of air gaps in the source/drain regions helps reduce parasitic capacitance and improve overall device performance.
• The device structure enables better control of channel regions, leading to enhanced transistor characteristics.

Benefits of this technology:

• Improved performance and power efficiency in electronic devices.
• Compact design allows for higher integration density and smaller chip sizes.
• Reduced parasitic capacitance leads to faster switching speeds and improved signal integrity.
• Enhanced transistor characteristics result in better overall circuit performance.

Original Abstract Submitted

An integrated circuit device includes a plurality of fin-type active areas extending in a first horizontal direction on a substrate, a plurality of channel regions respectively on the plurality of fin-type active areas, a plurality of gate lines surrounding the plurality of channel regions on the plurality of fin-type active areas and extending in a second horizontal direction that crosses the first horizontal direction, and a plurality of source/drain regions respectively at positions adjacent to the plurality of gate lines on the plurality of fin-type active areas and respectively in contact with the plurality of channel regions, and the plurality of source/drain regions respectively include a plurality of semiconductor layers and at least one air gap located therein.