18139985. SEMICONDUCTOR DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
Contents
SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18139985 titled 'SEMICONDUCTOR DEVICE
Simplified Explanation
The semiconductor device described in the abstract comprises a substrate with an active pattern, a channel pattern with stacked semiconductor patterns, a source/drain pattern, and a gate electrode with multiple electrodes.
- Substrate with active pattern
- Channel pattern with stacked semiconductor patterns
- Source/drain pattern
- Gate electrode with multiple electrodes
Potential Applications
This technology can be applied in:
- Semiconductor manufacturing
- Integrated circuits
- Electronic devices
Problems Solved
This technology helps to:
- Improve semiconductor device performance
- Enhance electrical connectivity
- Increase efficiency in electronic devices
Benefits
The benefits of this technology include:
- Higher functionality in semiconductor devices
- Improved electrical connections
- Enhanced overall performance of electronic devices
Original Abstract Submitted
Disclosed is a semiconductor device comprising a substrate that comprises an active pattern, a channel pattern on the active pattern and comprising a plurality of semiconductor patterns that are spaced apart from and vertically stacked on each other, a source/drain pattern electrically connected to the plurality of semiconductor patterns, a gate electrode on the plurality of semiconductor patterns and comprising a plurality of electrodes that are respectively below respective ones of the plurality of semiconductor patterns, the plurality of electrodes comprising a lowermost first electrode and a second electrode on the first electrode, and a first spacer between the first electrode and the source/drain pattern, wherein a horizontal width of the first electrode is less than a horizontal width of the second electrode.
