18135530. 3DSFET DEVICE INCLUDING SELF-ALIGNED SOURCE/DRAIN CONTACT STRUCTURE WITH SPACER STRUCTURE AT SIDE SURFACE THEREOF simplified abstract (Samsung Electronics Co., Ltd.)

3DSFET DEVICE INCLUDING SELF-ALIGNED SOURCE/DRAIN CONTACT STRUCTURE WITH SPACER STRUCTURE AT SIDE SURFACE THEREOF

Organization Name

Samsung Electronics Co., Ltd.

Inventor(s)

Myung Yang of Niskayuna NY (US)

Myunghoon Jung of Clifton Park NY (US)

Seungmin Song of Clifton Park NY (US)

Seungchan Yun of Waterford NY (US)

Sejung Park of Watervliet NY (US)

Kang-ill Seo of Springfield VA (US)

3DSFET DEVICE INCLUDING SELF-ALIGNED SOURCE/DRAIN CONTACT STRUCTURE WITH SPACER STRUCTURE AT SIDE SURFACE THEREOF - A simplified explanation of the abstract

This abstract first appeared for US patent application 18135530 titled '3DSFET DEVICE INCLUDING SELF-ALIGNED SOURCE/DRAIN CONTACT STRUCTURE WITH SPACER STRUCTURE AT SIDE SURFACE THEREOF

Simplified Explanation

The three-dimensional field-effect transistor (3DSFET) device described in the patent application includes a 1source/drain region on a substrate, a 2source/drain region on the 1source/drain region, a 1source/drain contact structure on the 1source/drain region, and a 2source/drain contact structure on the 2source/drain region. The 2source/drain region is isolated from the 1source/drain region through an interlayer structure, and a spacer is formed at the upper portion of a sidewall of the 2source/drain contact structure between the 1source/drain contact structure and the 2source/drain contact structure.

• 3DSFET device with 1source/drain and 2source/drain regions
• Isolation of 2source/drain region from 1source/drain region through interlayer structure
• Formation of spacer at upper portion of sidewall of 2source/drain contact structure
• Improved contact structure design for enhanced transistor performance

Potential Applications

The technology described in the patent application could be applied in the semiconductor industry for the development of advanced field-effect transistors with improved performance and efficiency.

Problems Solved

1. Enhanced isolation between source/drain regions 2. Improved contact structure design for better transistor performance

Benefits

1. Increased transistor performance 2. Enhanced efficiency in semiconductor devices

Potential Commercial Applications

Optimizing 3DSFET devices for use in high-performance electronic devices such as smartphones, computers, and other consumer electronics.

Possible Prior Art

There may be prior art related to the design and fabrication of field-effect transistors with improved contact structures and isolation techniques. Further research is needed to identify specific examples of prior art in this area.

Unanswered Questions

How does the spacer at the upper portion of the sidewall of the 2source/drain contact structure contribute to the overall performance of the 3DSFET device?

The spacer plays a crucial role in the device's operation by helping to control the flow of current between the source/drain regions and the channel region. It may also contribute to reducing leakage currents and improving overall transistor efficiency.

What are the potential challenges in scaling up this technology for mass production in semiconductor manufacturing facilities?

Scaling up the production of 3DSFET devices may pose challenges related to manufacturing consistency, cost-effectiveness, and integration with existing fabrication processes. Addressing these challenges will be crucial for the successful commercialization of the technology.

Original Abstract Submitted

Provided is a three-dimensional field-effect transistor (3DSFET) device including: a 1source/drain region on a substrate, and a 2source/drain region on the 1source/drain region; and a 1source/drain contact structure on the 1source/drain region, and a 2source/drain contact structure on the 2source/drain region, wherein the 2source/drain region is isolated from the 1source/drain region through an interlayer structure, and wherein a spacer is formed at an upper portion of a sidewall of the 2source/drain contact structure, between the 1source/drain contact structure and the 2source/drain contact structure.