18134344. SEMICONDUCTOR MEMORY DEVICE AND ELECTRONIC SYSTEM INCLUDING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
Contents
SEMICONDUCTOR MEMORY DEVICE AND ELECTRONIC SYSTEM INCLUDING THE SAME
Organization Name
Inventor(s)
SEMICONDUCTOR MEMORY DEVICE AND ELECTRONIC SYSTEM INCLUDING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 18134344 titled 'SEMICONDUCTOR MEMORY DEVICE AND ELECTRONIC SYSTEM INCLUDING THE SAME
Simplified Explanation
The semiconductor memory device described in the patent application includes a stack with alternating interlayer insulating layers and conductive patterns, a source conductive pattern on the stack, and vertical structures that penetrate the stack and are connected to the source conductive pattern. Each vertical structure consists of a vertical channel pattern, a data storage pattern enclosing the outer side surface of the vertical channel pattern, a vertical insulating pillar within the vertical channel pattern, and a vertical conductive pillar between the vertical insulating pillar and the source conductive pattern to link the vertical channel pattern to the source conductive pattern.
- The semiconductor memory device includes a unique vertical structure design for data storage.
- The vertical structures are connected to a source conductive pattern through vertical conductive pillars.
- The data storage patterns enclose the outer side surface of the vertical channel patterns.
- The vertical insulating pillars within the vertical channel patterns help in isolating the data storage patterns.
- The alternating stack of interlayer insulating layers and conductive patterns provides a compact and efficient memory storage solution.
- Potential Applications
- High-density memory devices
- Solid-state drives
- Embedded memory in electronic devices
- Problems Solved
- Increased data storage capacity in a compact space
- Improved data transfer speeds
- Enhanced data security with isolated data storage patterns
- Benefits
- Higher memory storage density
- Faster data access and retrieval
- Improved reliability and data security
Original Abstract Submitted
A semiconductor memory device includes: a stack including interlayer insulating layers and conductive patterns, which are alternately stacked; a source conductive pattern on the stack; and vertical structures provided to penetrate the stack and connected to the source conductive pattern. Each of the vertical structures includes: a vertical channel pattern; a data storage pattern enclosing an outer side surface of the vertical channel pattern; a vertical insulating pillar in the vertical channel pattern; and a vertical conductive pillar disposed between the vertical insulating pillar and the source conductive pattern to connect the vertical channel pattern to the source conductive pattern.
