18133964. SEMICONDUCTOR DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
Contents
SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
Seonhaeng Lee of Suwon-si (KR)
SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18133964 titled 'SEMICONDUCTOR DEVICE
Simplified Explanation
The patent application describes a semiconductor device with a unique structure and configuration for improved performance and functionality in memory cell regions. Here are the key points:
- The device includes a first active pattern in the memory cell region, shaped in an isolated manner with a major axis direction oblique to a first direction.
- A first device isolation pattern is provided inside a first trench in the substrate, covering the side wall of the first active pattern.
- A first gate structure is placed inside a gate trench, extending in the first direction and located on the upper portions of the first active pattern and the first device isolation pattern.
- A barrier impurity region is selectively formed on the surfaces of both side walls of the major axis of the first active pattern.
- First and second impurity regions are positioned on the upper portion of the first active pattern, adjacent to both sides of the first gate structure.
Potential applications of this technology:
- Memory devices: The improved structure and configuration can enhance the performance and functionality of memory cells, leading to faster and more efficient data storage and retrieval.
- Semiconductor manufacturing: The innovative design can be applied in the production of semiconductor devices, enabling more advanced and reliable products.
Problems solved by this technology:
- Performance limitations: The unique structure and configuration address performance limitations in memory cell regions, improving overall device performance and functionality.
- Integration challenges: The design helps overcome integration challenges in semiconductor manufacturing, allowing for more efficient production processes.
Benefits of this technology:
- Enhanced performance: The improved structure and configuration result in better performance and functionality of memory cells, leading to faster and more reliable operation.
- Increased efficiency: The innovative design helps optimize semiconductor manufacturing processes, improving efficiency and reducing production costs.
Original Abstract Submitted
A semiconductor device includes a first active pattern included in an upper portion of a substrate in a memory cell region, and having an isolated shape extending so that a direction oblique to a first direction is a major axis direction of the first active pattern. A first device isolation pattern provided inside a first trench included in the substrate, and covering a side wall of the first active pattern is provided. A first gate structure is provided inside a gate trench extending in the first direction on upper portions of the first active pattern and the first device isolation pattern. A barrier impurity region is selectively formed only on surfaces of both side walls of a major axis of the first active pattern. First and second impurity regions are provided on the upper portion of the first active pattern adjacent to both sides of the first gate structure.
