18133304. METAL FERROELECTRIC INSULATOR METAL STACK IN RRAM simplified abstract (International Business Machines Corporation)

METAL FERROELECTRIC INSULATOR METAL STACK IN RRAM

Organization Name

International Business Machines Corporation

Inventor(s)

Takashi Ando of Eastchester NY (US)

Reinaldo Vega of Mahopac NY (US)

Nicholas Anthony Lanzillo of Wynantskill NY (US)

David Wolpert of Poughkeepsie NY (US)

METAL FERROELECTRIC INSULATOR METAL STACK IN RRAM - A simplified explanation of the abstract

This abstract first appeared for US patent application 18133304 titled 'METAL FERROELECTRIC INSULATOR METAL STACK IN RRAM

Simplified Explanation: The patent application describes a memory structure with a unique dielectric stack that includes a ferroelectric dielectric layer and a paraelectric dielectric layer. The ferroelectric layer produces negative capacitance to amplify applied voltage, leading to the formation of conductive filaments when exposed to an electric field.

• The memory structure consists of a dielectric stack with a ferroelectric dielectric layer and a paraelectric dielectric layer.
• The ferroelectric dielectric layer generates negative capacitance to enhance the applied voltage.
• The thickness of the layers results in simultaneous breakdown of the dielectric material, forming conductive filaments.
• The structure includes electrodes at each end of the stack to apply the voltage.
• The electric field produced by the amplified voltage triggers the formation of conductive filaments in the dielectric layers.

Potential Applications: This technology could be used in non-volatile memory devices, neuromorphic computing, and other applications requiring high-density memory storage with low power consumption.

Problems Solved: This innovation addresses the need for memory structures that can amplify applied voltage and form conductive filaments for efficient data storage and processing.

Benefits: The memory structure offers enhanced performance, lower power consumption, and potentially higher storage density compared to traditional memory technologies.

Commercial Applications: Potential commercial applications include next-generation memory devices, artificial intelligence systems, and IoT devices that require efficient and high-performance memory solutions.

Prior Art: Prior research in the field of negative capacitance and ferroelectric materials may provide insights into similar technologies and applications.

Frequently Updated Research: Stay updated on advancements in ferroelectric materials, negative capacitance devices, and memory technologies to understand the latest developments in this field.

Questions about Memory Structures with Ferroelectric and Paraelectric Dielectric Layers: 1. How does the negative capacitance in the ferroelectric layer contribute to amplifying the applied voltage? 2. What are the potential challenges in scaling up this memory structure for commercial applications?

Original Abstract Submitted

A memory structure that includes a dielectric stack of a ferroelectric dielectric layer and a paraelectric dielectric layer. At least the ferroelectric dielectric layer produces a negative capacitance to amplify an applied voltage. A thickness of the ferroelectric dielectric layer and the paraelectric dielectric layer results in simultaneous breakdown of a dielectric material in each of the ferroelectric dielectric layer and the paraelectric dielectric layer for the formation of conductive filaments upon being exposed to an electric field produced by the applied voltage amplified by the negative capacitance. The memory structure also includes a first electrode at a first end of the dielectric stack, and a second electrode at a second end of the dielectric stack. The applied voltage is applied to the memory structure through at least one of the first electrode and the second electrode.