18133277. PLASMA ETCHING APPARATUS AND OPERATING METHOD THEREOF simplified abstract (Samsung Electronics Co., Ltd.)
Contents
- 1 PLASMA ETCHING APPARATUS AND OPERATING METHOD THEREOF
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 PLASMA ETCHING APPARATUS AND OPERATING METHOD THEREOF - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Unanswered Questions
- 1.11 Original Abstract Submitted
PLASMA ETCHING APPARATUS AND OPERATING METHOD THEREOF
Organization Name
Inventor(s)
PLASMA ETCHING APPARATUS AND OPERATING METHOD THEREOF - A simplified explanation of the abstract
This abstract first appeared for US patent application 18133277 titled 'PLASMA ETCHING APPARATUS AND OPERATING METHOD THEREOF
Simplified Explanation
The present disclosure describes a plasma etching apparatus that includes a processing chamber, a plasma source generator, a bias generator, and an acoustic wave generator. The apparatus is designed to etch a wafer using plasma formed by plasma source and bias pulses, while controlling the density of a reactive gas with an acoustic wave.
- Plasma etching apparatus components:
- Processing chamber - Plasma source generator - Bias generator - Acoustic wave generator
- Operation:
- Processing chamber receives etching gas and etches wafer using plasma - Plasma source generator generates plasma source pulse - Bias generator generates bias pulse - Acoustic wave generator controls density of reactive gas in plasma
Potential Applications
The technology can be applied in semiconductor manufacturing for precise etching processes.
Problems Solved
1. Improved control over plasma density and etching process. 2. Enhanced efficiency and accuracy in wafer etching.
Benefits
1. Higher quality and precision in etching. 2. Increased productivity and yield in semiconductor production.
Potential Commercial Applications
Optimized plasma etching technology for semiconductor industry.
Possible Prior Art
There may be prior art related to plasma etching apparatuses with similar components and functionalities.
Unanswered Questions
1. What specific materials or types of wafers can be effectively etched using this apparatus? 2. How does the acoustic wave generator impact the overall efficiency of the plasma etching process?
Original Abstract Submitted
The present disclosure provides plasma etching apparatuses and operating methods of the plasma etching apparatuses. In some embodiments, a plasma etching apparatus includes a processing chamber, a plasma source generator, a bias generator, and an acoustic wave generator. The processing chamber is configured to receive etching gas, and to etch a wafer using plasma that has been formed according to a plasma source pulse and a bias pulse. The a plasma source generator is configured to generate the plasma source pulse. The bias generator is configured to generate the bias pulse. The acoustic wave generator is configured to generate an acoustic wave having a wavefront with a first direction parallel to the wafer and to control a density of a reactive gas of the plasma.
