18132196. SEMICONDUCTOR MEMORY DEVICE simplified abstract (Samsung Electronics Co., Ltd.)

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SEMICONDUCTOR MEMORY DEVICE

Organization Name

Samsung Electronics Co., Ltd.

Inventor(s)

JEON IL Lee of Suwon-si (KR)

SERYEUN Yang of Suwon-si (KR)

HYERAN Lee of Suwon-si (KR)

SEMICONDUCTOR MEMORY DEVICE - A simplified explanation of the abstract

This abstract first appeared for US patent application 18132196 titled 'SEMICONDUCTOR MEMORY DEVICE

Simplified Explanation

The abstract describes a semiconductor memory device that includes various components such as bit lines, word lines, an active pattern, data storage patterns, and a source line.

  • The bit line extends in one direction, while the first and second word lines extend in a perpendicular direction and intersect the bit line.
  • The active pattern is located on the bit line between the first and second word lines. It consists of two vertical parts that are opposite to each other and a horizontal part that connects them.
  • The first data storage pattern is located between the first word line and the first vertical part of the active pattern.
  • The second data storage pattern is located between the second word line and the second vertical part of the active pattern.
  • The source line is connected to the active pattern and extends in the same direction as the bit line, crossing both the first and second word lines.

Potential applications of this technology:

  • Semiconductor memory devices are widely used in various electronic devices such as computers, smartphones, and digital cameras. This innovation can improve the performance and efficiency of these devices by providing a more compact and efficient memory storage solution.

Problems solved by this technology:

  • The active pattern and data storage patterns in this semiconductor memory device allow for more efficient storage and retrieval of data. This can help overcome the limitations of traditional memory devices in terms of speed, capacity, and power consumption.

Benefits of this technology:

  • The compact design of the active pattern and data storage patterns allows for a higher memory density, enabling the storage of more data in a smaller space.
  • The improved efficiency of data storage and retrieval can lead to faster processing speeds and reduced power consumption in electronic devices.
  • The integration of the source line with the active pattern and word lines simplifies the overall design and manufacturing process of the semiconductor memory device.


Original Abstract Submitted

A semiconductor memory device is provided. The semiconductor memory device includes: a bit line that extends in a first direction; first and second word lines that extend in a second direction and cross the bit line; an active pattern on the bit line between the first and second word lines, the active pattern including first second vertical parts that are opposite to each other, and a horizontal part that extends between the first and second vertical parts; a first data storage pattern between the first word line and the first vertical part of the active pattern; a second data storage pattern between the second word line and the second vertical part of the active pattern; and a source line connected to the active pattern, the source line extending the first direction and crossing the first word line and the second word line.