18125870. SEMICONDUCTOR DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
Contents
SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
Dong-Gwan Shin of Suwon-si (KR)
Yong Hee Park of Suwon-si (KR)
Hong Seon Yang of Suwon-si (KR)
SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18125870 titled 'SEMICONDUCTOR DEVICE
Simplified Explanation
The abstract describes a semiconductor device with specific features and configurations. It includes an active pattern with a first impurity of a certain conductivity, as well as first and second nanosheets on the active pattern. A gate electrode surrounds each of the nanosheets, and a lower source/drain region is present on the active pattern. The lower surface of the second nanosheet is higher than the uppermost surface of the lower source/drain region, which is doped with a second impurity of the first conductivity. An upper source/drain region, doped with a third impurity of a different conductivity, is located on the lower source/drain region. A gate insulation layer is positioned between the gate electrode and the lower and upper source/drain regions, making contact with both regions.
- The semiconductor device has an active pattern with nanosheets and specific impurity doping.
- The gate electrode surrounds the nanosheets, providing control over their behavior.
- The lower source/drain region is positioned below the second nanosheet, creating a unique configuration.
- The lower source/drain region is doped with a second impurity, while the upper source/drain region is doped with a third impurity of a different conductivity.
- The gate insulation layer separates the gate electrode from the source/drain regions, ensuring proper functioning.
Potential Applications
- This semiconductor device could be used in various electronic devices, such as smartphones, tablets, and computers.
- It may find applications in the field of integrated circuits, enabling more efficient and compact designs.
Problems Solved
- The configuration of the lower source/drain region being below the second nanosheet allows for improved performance and functionality of the device.
- The specific impurity doping and nanosheet design contribute to enhanced conductivity and control over the device's behavior.
- The gate insulation layer ensures proper isolation and functioning of the gate electrode and source/drain regions.
Benefits
- The semiconductor device offers improved performance and efficiency compared to previous designs.
- It allows for better control and manipulation of electrical currents within the device.
- The compact design and specific configurations make it suitable for integration into various electronic devices.
Original Abstract Submitted
A semiconductor device includes an active pattern with a first impurity having a first conductivity, first and second nanosheets on the active pattern, a gate electrode on the active pattern and surrounding each of the first and second nanosheets, a lower source/drain region on the active pattern, an uppermost surface of the lower source/drain region being lower than a lower surface of the second nanosheet, and the lower source/drain region being doped with a second impurity having the first conductivity, an upper source/drain region on the lower source/drain region, the upper source/drain region being doped with a third impurity having a second conductivity different from the first conductivity, and a gate insulation layer between the gate electrode and the lower and upper source/drain regions, the gate insulation layer being in contact with each of the lower and upper source/drain regions.
