18121169. MANUFACTURING METHOD FOR GRAPHENE FILM simplified abstract (KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY)
Contents
- 1 MANUFACTURING METHOD FOR GRAPHENE FILM
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 MANUFACTURING METHOD FOR GRAPHENE FILM - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Unanswered Questions
- 1.11 Original Abstract Submitted
MANUFACTURING METHOD FOR GRAPHENE FILM
Organization Name
KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY
Inventor(s)
MANUFACTURING METHOD FOR GRAPHENE FILM - A simplified explanation of the abstract
This abstract first appeared for US patent application 18121169 titled 'MANUFACTURING METHOD FOR GRAPHENE FILM
Simplified Explanation
The present invention provides a method of manufacturing a graphene film by preparing a substrate with a carbon layer in a chamber and forming a graphene layer through plasma formation and applying a positive voltage pulse to the substrate.
- Method of manufacturing a graphene film:
- Prepare a substrate with a carbon layer in a chamber - Form a graphene layer by creating plasma in the chamber - Apply a positive voltage pulse to the substrate
Potential Applications
Graphene films can be used in various applications such as: - Flexible electronics - Energy storage devices - Sensors - Composite materials
Problems Solved
This method solves the problem of efficiently manufacturing graphene films with controlled properties.
Benefits
- Cost-effective production of graphene films - Controlled and uniform graphene layer formation - Scalable manufacturing process
Potential Commercial Applications
"Manufacturing Graphene Films for Advanced Electronics and Energy Storage Devices"
Possible Prior Art
Prior methods of manufacturing graphene films include chemical vapor deposition (CVD) and mechanical exfoliation techniques.
Unanswered Questions
What are the specific parameters for plasma formation in the chamber?
The exact conditions for plasma formation, such as gas composition and pressure, are not detailed in the abstract.
How does the positive voltage pulse affect the formation of the graphene layer?
The mechanism by which the positive voltage pulse influences the graphene layer formation is not explained in the abstract.
Original Abstract Submitted
An exemplary embodiment of the present invention can provide a method of manufacturing a graphene film, including preparing a substrate including a carbon layer in a chamber, and forming a graphene layer by forming plasma in the chamber and applying a positive voltage pulse to the substrate.
