18120704. SEMICONDUCTOR DEVICE simplified abstract (KABUSHIKI KAISHA TOSHIBA)
Contents
- 1 SEMICONDUCTOR DEVICE
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Unanswered Questions
- 1.11 Original Abstract Submitted
SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
Takuya Yasutake of Kanazawa Ishikawa (JP)
Hiroaki Katou of Nonoichi Ishikawa (JP)
SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18120704 titled 'SEMICONDUCTOR DEVICE
Simplified Explanation
The semiconductor device described in the abstract includes a drain electrode, a source electrode, a semiconductor region, a gate electrode, a first insulation film, and a second insulation film with a specific dielectric constant higher than the first insulation film.
- The drain electrode, source electrode, and semiconductor region are key components of the semiconductor device.
- The gate electrode is positioned in the semiconductor region through the first insulation film.
- The second insulation film, with a higher dielectric constant, is located between the gate electrode and the source electrode.
Potential Applications
The semiconductor device could be used in various electronic applications such as integrated circuits, power amplifiers, and sensors.
Problems Solved
This technology helps in improving the performance and efficiency of semiconductor devices by utilizing insulation films with specific dielectric constants.
Benefits
The use of the second insulation film with a higher dielectric constant can enhance the overall functionality and reliability of the semiconductor device.
Potential Commercial Applications
"Enhancing Semiconductor Devices with High Dielectric Constant Insulation Films"
Possible Prior Art
There may be prior art related to the use of different insulation films in semiconductor devices to improve performance and efficiency.
Unanswered Questions
How does the specific dielectric constant of the second insulation film impact the overall performance of the semiconductor device?
The specific dielectric constant of the second insulation film plays a crucial role in determining the capacitance and speed of the device.
Are there any limitations or drawbacks associated with using insulation films with higher dielectric constants in semiconductor devices?
While higher dielectric constants can offer benefits, they may also introduce challenges such as increased power consumption or manufacturing complexities.
Original Abstract Submitted
A semiconductor device according to the present embodiment includes a drain electrode, a source electrode, a semiconductor region disposed between the drain electrode and the source electrode, a gate electrode disposed in the semiconductor region via a first insulation film, and a second insulation film disposed between the gate electrode and the source electrode and having a specific dielectric constant higher than a specific dielectric constant of the first insulation film.
