18120244. SERIAL-GATE TRANSISTOR AND NONVOLATILE MEMORY DEVICE INCLUDING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
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SERIAL-GATE TRANSISTOR AND NONVOLATILE MEMORY DEVICE INCLUDING THE SAME
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SERIAL-GATE TRANSISTOR AND NONVOLATILE MEMORY DEVICE INCLUDING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 18120244 titled 'SERIAL-GATE TRANSISTOR AND NONVOLATILE MEMORY DEVICE INCLUDING THE SAME
Simplified Explanation
The present disclosure describes a nonvolatile memory device that includes serial-gate transistors. These transistors are arranged in a horizontal direction above a semiconductor substrate and are used to transfer driving signals to corresponding memory blocks. The gates of the transistors are electrically decoupled from each other, and block selection signals applied to the gates can be controlled independently.
- The nonvolatile memory device includes a plurality of memory blocks, pass transistor blocks, and sequentially arranged gates.
- Each pass transistor block contains serial-gate transistors that transfer driving signals to specific memory blocks.
- The serial-gate transistors have a specific arrangement of source-drain regions and gate regions.
- The gates of the transistors are electrically decoupled from each other.
- Block selection signals applied to the gates can be controlled independently.
Potential applications of this technology:
- Nonvolatile memory devices: This technology can be used in the development of nonvolatile memory devices, such as flash memory, that require efficient transfer of driving signals to memory blocks.
- Semiconductor industry: The use of serial-gate transistors can enhance the performance and functionality of various semiconductor devices.
Problems solved by this technology:
- Efficient signal transfer: The use of serial-gate transistors allows for the efficient transfer of driving signals to specific memory blocks, improving the overall performance of the nonvolatile memory device.
- Independent control: The ability to control block selection signals independently provides flexibility in accessing and manipulating data stored in the memory blocks.
Benefits of this technology:
- Improved memory device performance: The arrangement of serial-gate transistors and the independent control of block selection signals enhance the performance and efficiency of nonvolatile memory devices.
- Increased functionality: The use of serial-gate transistors and independent control of block selection signals enable more advanced data storage and retrieval operations in nonvolatile memory devices.
Original Abstract Submitted
The present disclosure provides serial-gate transistors and nonvolatile memory devices including serial-gate transistors. In some embodiments, a nonvolatile memory device includes a plurality of memory blocks, a plurality of pass transistor blocks, and a plurality of gates sequentially arranged in a horizontal direction in a gate region above a semiconductor substrate. Each of the plurality of pass transistor blocks includes a plurality of serial-gate transistors configured to transfer a plurality of driving signals to a corresponding memory block of the plurality of memory blocks. Each of the plurality of serial-gate transistors includes a first source-drain region, a gate region, and a second source-drain region that are sequentially arranged in a horizontal direction at a semiconductor substrate. The plurality of gates are electrically decoupled from each other. A plurality of block selection signals respectively applied to the plurality of gates are controlled independently of each other.
