18119037. INTEGRATED CIRCUIT DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
Contents
INTEGRATED CIRCUIT DEVICE
Organization Name
Inventor(s)
Kyungbin Chun of Suwon-si (KR)
Youngkwang Kim of Suwon-si (KR)
INTEGRATED CIRCUIT DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18119037 titled 'INTEGRATED CIRCUIT DEVICE
Simplified Explanation
The abstract of the patent application describes an integrated circuit (IC) device that includes a fin-type active region on a substrate, a pair of nanosheets on the fin-type active region, a gate line surrounding the pair of nanosheets, a sub-gate portion between the pair of nanosheets, a source/drain region contacting the pair of nanosheets, and a gate dielectric film between the gate line and the pair of nanosheets and between the gate line and the source/drain region. The source/drain region includes a first blocking layer between the pair of nanosheets, which has an edge barrier enhancing portion facing the sub-gate portion, and a second blocking layer. The first blocking layer intermittently extends in the vertical direction.
- The patent application describes an IC device with a unique structure that includes a fin-type active region, nanosheets, a gate line, and a source/drain region.
- The gate line surrounds the nanosheets and includes a sub-gate portion between them.
- The source/drain region contacts the nanosheets and includes a first blocking layer with an edge barrier enhancing portion facing the sub-gate portion.
- The first blocking layer intermittently extends in the vertical direction.
- The device also includes a gate dielectric film between the gate line and the nanosheets, as well as between the gate line and the source/drain region.
Potential applications of this technology:
- This IC device can be used in various electronic devices, such as smartphones, tablets, and computers.
- It can be applied in the development of advanced processors and memory chips.
- The unique structure of the device allows for improved performance and power efficiency in electronic devices.
Problems solved by this technology:
- The integrated circuit device addresses the challenge of improving performance and power efficiency in electronic devices.
- The unique structure helps to reduce leakage current and enhance transistor performance.
- It overcomes limitations of traditional IC designs by incorporating nanosheets and a fin-type active region.
Benefits of this technology:
- The IC device offers improved performance and power efficiency compared to traditional designs.
- It enables faster processing speeds and enhanced functionality in electronic devices.
- The unique structure allows for better control of leakage current and transistor performance.
Original Abstract Submitted
An integrated circuit (IC) device includes a fin-type active region on a substrate, a pair of nanosheets on the fin-type active region, a gate line surrounding the pair of nanosheets, the gate line including a sub-gate portion between the pair of nanosheets, a source/drain region contacting the pair of nanosheets, and a gate dielectric film between the gate line and the pair of nanosheets and between the gate line and the source/drain region, wherein the source/drain region includes a first blocking layer between the pair of nanosheets, the first blocking layer including an edge barrier enhancing portion facing the sub-gate portion, and a second blocking layer, wherein the first blocking layer includes a portion that intermittently extends in the vertical direction.
