18118776. THREE-DIMENSIONAL SEMICONDUCTOR MEMORY DEVICE, ELECTRONIC SYSTEM INCLUDING THE SAME, AND METHOD OF FABRICATING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
Contents
- 1 THREE-DIMENSIONAL SEMICONDUCTOR MEMORY DEVICE, ELECTRONIC SYSTEM INCLUDING THE SAME, AND METHOD OF FABRICATING THE SAME
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 THREE-DIMENSIONAL SEMICONDUCTOR MEMORY DEVICE, ELECTRONIC SYSTEM INCLUDING THE SAME, AND METHOD OF FABRICATING THE SAME - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Original Abstract Submitted
THREE-DIMENSIONAL SEMICONDUCTOR MEMORY DEVICE, ELECTRONIC SYSTEM INCLUDING THE SAME, AND METHOD OF FABRICATING THE SAME
Organization Name
Inventor(s)
Takuya Futatsuyama of Suwon-si (KR)
THREE-DIMENSIONAL SEMICONDUCTOR MEMORY DEVICE, ELECTRONIC SYSTEM INCLUDING THE SAME, AND METHOD OF FABRICATING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 18118776 titled 'THREE-DIMENSIONAL SEMICONDUCTOR MEMORY DEVICE, ELECTRONIC SYSTEM INCLUDING THE SAME, AND METHOD OF FABRICATING THE SAME
Simplified Explanation
The disclosed semiconductor device consists of a peripheral circuit structure, a cell array structure, and a backside structure. The cell array structure includes a stack structure with gate electrodes and interlayer dielectric layers that are alternately stacked. Through plugs extend through the stack structure, with each plug having a first surface adjacent to the backside structure and a second surface opposite to the first surface. A middle circuit structure is connected to the peripheral circuit structure and is located between the stack structure and the peripheral circuit structure. A connection plug connects the middle circuit structure to the backside structure. The through plugs include a first through plug connected to the backside structure through the first surface and a second through plug connected to the middle circuit structure through the second surface.
- The semiconductor device has a complex structure with multiple circuit structures and through plugs.
- The stack structure in the cell array includes gate electrodes and interlayer dielectric layers.
- The through plugs extend through the stack structure and connect the backside structure and the middle circuit structure.
- The middle circuit structure is connected to the peripheral circuit structure.
- The first through plug connects the backside structure through the first surface.
- The second through plug connects the middle circuit structure through the second surface.
Potential Applications
- This semiconductor device can be used in various electronic devices that require complex circuit structures, such as smartphones, tablets, and computers.
- It can be utilized in memory devices, processors, and other integrated circuits.
Problems Solved
- The disclosed device solves the problem of connecting the backside structure and the middle circuit structure in a semiconductor device with a stack structure.
- It addresses the challenge of integrating multiple circuit structures in a compact and efficient manner.
Benefits
- The semiconductor device offers improved connectivity and functionality due to the integration of the peripheral circuit structure, cell array structure, and backside structure.
- It allows for more efficient use of space and resources, resulting in smaller and more compact electronic devices.
- The device enables higher performance and faster data processing in electronic devices.
Original Abstract Submitted
Disclosed is a semiconductor device comprising a peripheral circuit structure on a first substrate, a cell array structure on the peripheral circuit structure, and a backside structure on the cell array structure. The cell array structure includes a stack structure including gate electrodes and interlayer dielectric layers that are alternately stacked, through plugs that extend in a first direction through the stack structure and each including a first surface adjacent to the backside structure and a second surface opposite to the first surface, a middle circuit structure between the stack structure and the peripheral circuit structure and connected to the peripheral circuit structure, and a connection plug connected to the middle circuit structure and the backside structure. The through plugs include a first through plug connected through the first surface to the backside structure, and a second through plug connected through the second surface to the middle circuit structure.