18116071. SEMICONDUCTOR DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)

From WikiPatents
Jump to navigation Jump to search

SEMICONDUCTOR DEVICE

Organization Name

SAMSUNG ELECTRONICS CO., LTD.

Inventor(s)

Jungmin Park of Suwon-si (KR)

Hanjin Lim of Suwon-si (KR)

Hyungsuk Jung of Suwon-si (KR)

SEMICONDUCTOR DEVICE - A simplified explanation of the abstract

This abstract first appeared for US patent application 18116071 titled 'SEMICONDUCTOR DEVICE

Simplified Explanation

The abstract describes a semiconductor device that includes a substrate, a lower electrode, a support, a dielectric layer, and an upper electrode. The lower electrode has a base electrode layer containing a halogen element and an insertion layer containing carbon. The insertion layer is inserted in a portion of the lower electrode adjacent to the support and the dielectric layer.

  • The lower electrode of the semiconductor device includes a base electrode layer and an insertion layer.
  • The base electrode layer contains a halogen element.
  • The insertion layer contains carbon.
  • The insertion layer is inserted in a portion of the lower electrode.
  • The portion of the lower electrode is adjacent to the support and the dielectric layer.

Potential applications of this technology:

  • Semiconductor devices using this structure can be used in various electronic devices such as computers, smartphones, and tablets.
  • This technology can be applied in memory devices, logic circuits, and other integrated circuits.

Problems solved by this technology:

  • The insertion layer containing carbon helps improve the performance and reliability of the semiconductor device.
  • The use of a halogen element in the base electrode layer enhances the electrical properties of the lower electrode.

Benefits of this technology:

  • The semiconductor device with this structure exhibits improved performance and reliability.
  • The use of a halogen element and carbon in the lower electrode provides enhanced electrical properties.
  • This technology enables the fabrication of more efficient and advanced semiconductor devices.


Original Abstract Submitted

A semiconductor device includes a substrate, a lower electrode above the substrate, the lower electrode extending in a vertical direction, a support surrounding a side wall of the lower electrode and supporting the lower electrode, a dielectric layer on the lower electrode and the support, and an upper electrode on the dielectric layer, wherein the lower electrode includes a base electrode layer and an insertion layer, the base electrode layer containing a halogen element, and the insertion layer containing carbon, and the insertion layer is inserted in a portion of the lower electrode, the portion of the lower electrode being adjacent to the support and the dielectric layer.

Retrieved from "http://wikipatents.org/index.php?title=18116071._SEMICONDUCTOR_DEVICE_simplified_abstract_(SAMSUNG_ELECTRONICS_CO.,_LTD.)&oldid=27135"