18108722. SEMICONDUCTOR DEVICES simplified abstract (Samsung Electronics Co., Ltd.)
Contents
SEMICONDUCTOR DEVICES
Organization Name
Inventor(s)
SEMICONDUCTOR DEVICES - A simplified explanation of the abstract
This abstract first appeared for US patent application 18108722 titled 'SEMICONDUCTOR DEVICES
Simplified Explanation
The semiconductor device described in the patent application includes several components:
- First conductive lines on a substrate, spaced apart from each other in a first direction.
- Second conductive lines, spaced apart from the first conductive lines in a second direction.
- Third conductive lines, spaced apart from the second conductive lines in the second direction.
- Gate electrodes between the first, second, and third conductive lines, extending in the first direction.
- Ferroelectric patterns on the side surfaces of the gate electrodes.
- Gate insulating patterns on the side surfaces of the gate electrodes, spaced apart from the gate electrodes with the ferroelectric patterns in between.
- Channel patterns extending along the side surfaces of the gate insulating patterns.
- Each channel pattern is electrically connected to the second conductive lines and may also be connected to the first or third conductive lines.
Potential applications of this technology:
- Memory devices: The ferroelectric patterns can be used to store data, making this technology suitable for non-volatile memory applications.
- Logic devices: The channel patterns and conductive lines can be used to create transistors, enabling the construction of logic circuits.
Problems solved by this technology:
- Non-volatility: The use of ferroelectric patterns allows for the retention of data even when power is turned off, solving the problem of data loss in volatile memory devices.
- Integration: The design of the device allows for the integration of multiple transistors and memory cells in a compact manner, solving the problem of limited space in semiconductor devices.
Benefits of this technology:
- High-speed operation: The use of transistors and memory cells in the same device allows for fast data access and processing.
- Low power consumption: The non-volatile nature of the memory cells reduces the need for constant power supply, resulting in lower power consumption.
- Compact size: The integration of multiple components in a small area allows for the creation of smaller and more efficient semiconductor devices.
Original Abstract Submitted
A semiconductor device may include first conductive lines on a substrate and spaced apart from each other in a first direction, second conductive lines spaced apart from the first conductive lines in a second direction, third conductive lines spaced apart from the second conductive lines in the second direction, gate electrodes between the first, second and third conductive lines and extending in the first direction, ferroelectric patterns on respective side surfaces of the gate electrodes, gate insulating patterns on the respective side surfaces of the gate electrodes and spaced apart from the respective side surfaces of the gate electrodes with the ferroelectric patterns respectively therebetween, and channel patterns extending along respective side surfaces of the gate insulating patterns. Each of the channel patterns may be electrically connected to the second conductive lines, respectively, and may be electrically connected to the first conductive lines or the third conductive lines, respectively.
