18108089. SEMICONDUCTOR DEVICE simplified abstract (TOSHIBA ELECTRONIC DEVICES & STORAGE CORPORATION)

SEMICONDUCTOR DEVICE

Organization Name

TOSHIBA ELECTRONIC DEVICES & STORAGE CORPORATION

Inventor(s)

Yuto Adachi of Ibo Hyogo (JP)

Yoichi Hori of Himeji Hyogo (JP)

Makoto Mizukami of Ibo Hyogo (JP)

SEMICONDUCTOR DEVICE - A simplified explanation of the abstract

This abstract first appeared for US patent application 18108089 titled 'SEMICONDUCTOR DEVICE

Simplified Explanation

The semiconductor device described in the abstract consists of various layers and electrodes, including a first electrode, first and second semiconductor layers, a metal layer, a second electrode, a bonding member, and a conductive member. The metal layer forms a Schottky junction with the first semiconductor layer, and the conductive member is made of a different material from the metal layer. The area ratio of the conductive member directly under the bonding member is higher than in other regions.

• First electrode
• First semiconductor layer
• Second semiconductor layer
• Metal layer
• Second electrode
• Bonding member
• Conductive member

Potential Applications

The technology described in this patent application could potentially be used in the development of advanced semiconductor devices for various electronic applications, such as in integrated circuits, power electronics, and sensors.

Problems Solved

This technology helps in improving the performance and efficiency of semiconductor devices by optimizing the interface between different layers and electrodes, enhancing the overall functionality and reliability of the devices.

Benefits

- Enhanced performance of semiconductor devices - Improved efficiency and reliability - Optimal interface design for better functionality

Potential Commercial Applications

"Optimizing Interface Design in Semiconductor Devices for Enhanced Performance"

Possible Prior Art

There may be prior art related to optimizing the interface design in semiconductor devices to improve performance and reliability. Research and patents in the field of semiconductor technology may have addressed similar issues in the past.

Unanswered Questions

How does this technology compare to existing methods for optimizing semiconductor device performance?

This article provides a detailed description of a specific semiconductor device design, but it does not directly compare the technology to existing methods or solutions in the field. Further research or testing may be needed to evaluate the effectiveness of this approach compared to other techniques.

What are the potential limitations or challenges in implementing this technology in practical applications?

While the abstract highlights the benefits and features of the semiconductor device design, it does not address any potential limitations or challenges that may arise during the implementation of this technology in real-world applications. Understanding these factors is crucial for assessing the feasibility and scalability of the innovation.

Original Abstract Submitted

A semiconductor device includes a first electrode, a first semiconductor layer of a first conductivity type located on the first electrode, a second semiconductor layer of a second conductivity type located on a portion of the first semiconductor layer, a metal layer located on the first and second semiconductor layers, a second electrode located on the metal layer, a bonding member connected to an upper surface of the second electrode, and a conductive member located between the second semiconductor layer and the metal layer. The metal layer has a Schottky junction with the first semiconductor layer. The conductive member is made of a different material from the metal layer. An area ratio of the conductive member in a region directly under the bonding member is higher than an area ratio of the conductive member in a region other than the region directly under the bonding member.