18106540. INTEGRATED CIRCUIT DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)

INTEGRATED CIRCUIT DEVICE

Organization Name

SAMSUNG ELECTRONICS CO., LTD.

Inventor(s)

SEUNGMIN Cha of SUWON-SI (KR)

SEUNGMIN Song of SUWON-SI (KR)

YOUNGWOO Kim of SUWON-SI (KR)

JINKYU Kim of SUWON-SI (KR)

SORA You of SUWON-SI (KR)

NAMHYUN Lee of SUWON-SI (KR)

SUNGMOON Lee of SUWON-SI (KR)

INTEGRATED CIRCUIT DEVICE - A simplified explanation of the abstract

This abstract first appeared for US patent application 18106540 titled 'INTEGRATED CIRCUIT DEVICE

Simplified Explanation

The abstract describes an integrated circuit device that includes a substrate with a fin-type active region defined by a trench on the front surface. A device separation layer fills the trench, and a source/drain region is located on the fin-type active region. A first conductive plug is arranged on the source/drain region and connected to it. A power wiring line is partially arranged on the lower surface of the substrate, and a buried rail is connected to the power wiring line through the device separation layer. A power via connects the buried rail to the first conductive plug.

• The device has a fin-type active region defined by a trench on the front surface of the substrate.
• A device separation layer fills the trench, providing isolation for the active region.
• A source/drain region is located on the fin-type active region.
• A first conductive plug is arranged on the source/drain region and electrically connected to it.
• A power wiring line is at least partially arranged on the lower surface of the substrate.
• A buried rail is connected to the power wiring line through the device separation layer and decreases in horizontal width towards the power wiring line.
• A power via connects the buried rail to the first conductive plug.

Potential applications of this technology:

• Integrated circuit devices requiring efficient power distribution and connectivity.
• Devices that benefit from a fin-type active region for improved performance and compactness.

Problems solved by this technology:

• Provides a compact and efficient power distribution system within the integrated circuit device.
• Enables effective connectivity between the power wiring line and the fin-type active region.

Benefits of this technology:

• Improved performance and efficiency of integrated circuit devices.
• Enhanced power distribution and connectivity within the device.
• Compact design for space-constrained applications.

Original Abstract Submitted

An integrated circuit device includes a substrate, having a front surface and a rear surface opposite to each other, and a fin-type active region defined by a trench in the front surface, a device separation layer filling the trench, a source/drain region on the fin-type active region, a first conductive plug arranged on the source/drain region and electrically connected to the source/drain region, a power wiring line at least partially arranged on a lower surface of the substrate, a buried rail connected to the power wiring line through the device separation layer and decreasing in horizontal width toward the power wiring line, and a power via connecting the buried rail to the first conductive plug.