18103897. SEMICONDUCTOR DEVICE simplified abstract (Samsung Electronics Co., Ltd.)
Contents
SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18103897 titled 'SEMICONDUCTOR DEVICE
Simplified Explanation
The patent application describes a semiconductor device that includes two active patterns on a substrate, each with a channel pattern consisting of stacked and spaced semiconductor patterns. The device also has two gate electrodes, each on a respective channel pattern. The inner gate electrodes of the two gate electrodes have different concentrations of aluminum or silicon.
- The semiconductor device has first and second active patterns on a substrate.
- Each active pattern has a channel pattern with stacked and spaced semiconductor patterns.
- The device has two gate electrodes, one on each channel pattern.
- The inner gate electrodes of the two gate electrodes have different concentrations of aluminum or silicon.
Potential applications of this technology:
- This technology can be used in the manufacturing of semiconductor devices such as transistors.
- It can be applied in various electronic devices that rely on semiconductor technology, such as computers, smartphones, and televisions.
Problems solved by this technology:
- The different concentrations of aluminum or silicon in the inner gate electrodes allow for better control and optimization of the device's performance.
- This technology addresses the need for precise control of the electrical properties of semiconductor devices.
Benefits of this technology:
- The different concentrations of aluminum or silicon in the inner gate electrodes enable improved performance and efficiency of the semiconductor device.
- This technology provides flexibility in designing and manufacturing semiconductor devices with specific electrical characteristics.
Original Abstract Submitted
A semiconductor device includes first and second active patterns respectively provided on a first and second PMOSFET regions of a substrate, a first channel pattern on the first active pattern, the first channel pattern including first semiconductor patterns stacked and spaced apart from each other, a second channel pattern on the second active pattern, the second channel pattern including second semiconductor patterns stacked and spaced apart from each other, a first gate electrode on the first channel pattern, and a second gate electrode on the second channel pattern. A first concentration of aluminum (Al) or silicon (Si) in an inner gate electrode of the first gate electrode is different from a second concentration of aluminum (Al) or silicon (Si) in an inner gate electrode of the second gate electrode.
