18103754. NON-VOLATILE MEMORY DEVICE AND MEMORY SYSTEM INCLUDING THE SAME AND PROGRAM METHOD THEREOF simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
Contents
NON-VOLATILE MEMORY DEVICE AND MEMORY SYSTEM INCLUDING THE SAME AND PROGRAM METHOD THEREOF
Organization Name
Inventor(s)
WON-TAECK Jung of HWASEONG-SI (KR)
SANG-WAN Nam of HWASEONG-SI (KR)
JAEYONG Jeong of YONGIN-SI (KR)
NON-VOLATILE MEMORY DEVICE AND MEMORY SYSTEM INCLUDING THE SAME AND PROGRAM METHOD THEREOF - A simplified explanation of the abstract
This abstract first appeared for US patent application 18103754 titled 'NON-VOLATILE MEMORY DEVICE AND MEMORY SYSTEM INCLUDING THE SAME AND PROGRAM METHOD THEREOF
Simplified Explanation
The abstract describes a three-dimensional nonvolatile memory device that includes a cell string with a pillar structure. The pillar structure consists of a ground selection transistor, multiple memory cells, and a string selection transistor stacked vertically over a substrate. The memory cells are divided into two groups, with the second group stacked on top of the first group. The width of the pillar structure decreases towards the substrate in a depth direction. The method of programming the memory device involves initializing the channel of a memory cell in the first cell group through the ground selection transistor, and then applying a program voltage to the memory cell in the pillar structure.
- The memory device is three-dimensional and nonvolatile.
- It includes a cell string with a pillar structure.
- The pillar structure consists of a ground selection transistor, multiple memory cells, and a string selection transistor.
- The memory cells are divided into two groups and stacked vertically.
- The width of the pillar structure decreases towards the substrate.
- The method of programming involves initializing the memory cell channel and applying a program voltage.
Potential Applications
This technology can be applied in various fields where nonvolatile memory is required, such as:
- Consumer electronics - smartphones, tablets, and laptops.
- Data storage - solid-state drives (SSDs) and USB flash drives.
- Automotive - infotainment systems and advanced driver-assistance systems (ADAS).
- Internet of Things (IoT) - connected devices and sensors.
Problems Solved
The technology addresses the following problems:
- Limited memory capacity - the three-dimensional structure allows for stacking multiple memory cells, increasing the overall capacity.
- Programming efficiency - the method of initializing the memory cell channel and applying a program voltage improves the programming process.
- Space constraints - the decreasing width of the pillar structure enables compact integration of the memory device.
Benefits
The benefits of this technology include:
- Increased memory capacity - the three-dimensional structure allows for stacking more memory cells, increasing the storage capacity.
- Improved programming efficiency - the method of initializing the memory cell channel and applying a program voltage enhances the programming process.
- Space-saving design - the decreasing width of the pillar structure enables compact integration, saving valuable space in electronic devices.
Original Abstract Submitted
A three-dimensional (3D) nonvolatile memory device includes a cell string. The cell string includes a pillar structure comprising a ground selection transistor, a plurality of memory cells, and a string selection transistor stacked vertically over a substrate. The memory cells comprise a first cell group and a second cell group stacked on the first cell group, and a horizontal width of at least a portion of the pillar structure decreases in a depth direction towards the substrate. A method of programming the memory device includes initializing a channel of a memory cell of the first cell group of the cell string through the ground selection transistor of the pillar structure, and then applying a program voltage to the memory cell of the pillar structure of the cell string.
