18100714. SEMICONDUCTOR DEVICE STRUCTURE AND METHODS OF FORMING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)

SEMICONDUCTOR DEVICE STRUCTURE AND METHODS OF FORMING THE SAME

Organization Name

Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor(s)

Yi-Ruei Jhan of Keelung (TW)

Pei-Yu Wang of Hsinchu (TW)

Cheng-Ting Chung of Hsinchu (TW)

Kuan-Ting Pan of Taipei (TW)

Shi Ning Ju of Hsinchu (TW)

Kuo-Cheng Chiang of Hsinchu (TW)

Chih-Hao Wang of Hsinchu (TW)

SEMICONDUCTOR DEVICE STRUCTURE AND METHODS OF FORMING THE SAME - A simplified explanation of the abstract

This abstract first appeared for US patent application 18100714 titled 'SEMICONDUCTOR DEVICE STRUCTURE AND METHODS OF FORMING THE SAME

The method described in the patent application involves growing a conformal semiconductor layer between two stacks of semiconductor layers, filling the space with a dielectric fin, and forming a metal gate structure over the first semiconductor layers.

• Epitaxial growth of a conformal semiconductor layer from two stacks of semiconductor layers
• Filling the space between the stacks with a dielectric fin
• Removal of the conformal semiconductor layer and second semiconductor layers
• Formation of a metal gate structure over the first semiconductor layers
• Process to form isolation between portions of the metal gate structure

Potential Applications: - Semiconductor devices - Nanotechnology - Electronics industry

Problems Solved: - Improving the performance and efficiency of nanosheet devices - Enhancing the functionality of semiconductor layers

Benefits: - Increased device performance - Enhanced control over semiconductor layers - Potential for smaller and more efficient devices

Commercial Applications: Title: Advanced Nanosheet Device Technology for Semiconductor Industry This technology could revolutionize the semiconductor industry by enabling the development of more advanced and efficient nanosheet devices. It has the potential to be used in a wide range of electronic applications, from consumer electronics to industrial equipment.

Questions about Nanosheet Device Technology: 1. How does this technology improve the performance of semiconductor devices? 2. What are the potential commercial applications of nanosheet devices in the electronics industry?

Frequently Updated Research: Researchers are constantly exploring new materials and techniques to further enhance the capabilities of nanosheet devices. Stay updated on the latest advancements in semiconductor technology to leverage the full potential of this innovation.

Original Abstract Submitted

A method for forming a nanosheet device is provided. The method includes epitaxially growing a conformal semiconductor layer from a first stack of semiconductor layers and a second stack of the semiconductor layers. Each of the first and second stack of semiconductor layers includes a plurality of first semiconductor layers and a plurality of second semiconductor layers alternately stacked on each other. A space between the first and second stacks of semiconductor layers is filled with a dielectric fin. The conformal semiconductor layer and the second semiconductor layers may be removed. A metal gate structure is formed over the first semiconductor layers and filling openings created by removal of the conformal semiconductor layer and the second semiconductor layer. A process may be performed on the metal gate structure to form an isolation between the portions of the metal gate structure being separated by a patterning process.